A study on annealing mechanisms with different manganese contents in CuMn alloy

Wu, Chia Yang; Wu, Chi Ting; Lee, Wen Hsi; Chang, Shih Chieh; Wang, Ying Lang

doi:10.1016/j.jallcom.2012.06.093

Cited by 17 publications

(13 citation statements)

References 13 publications

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“…The corresponding positive TCR implies a metallic type of conductivity. A similar behaviour of the resistivity has been reported by Wu et al 9 in the 0-10 at. % Mn concentration range of Cu-Mn alloys.…”

Section: Resultssupporting

confidence: 88%

“…Though several studies have been made on the self-forming barrier process, few of these focused on the electrical characteristics of the Cu alloy films. 8,9 During the segregation of Mn from the Cu-Mn alloy to the interfaces the composition and resistivity of layers varies determining the properties of the interconnects formed. Mapping the whole Cu-Mn system will provide a fundamental understanding and assist in the search for optimum parameters for future technological development.…”

Section: Introductionmentioning

confidence: 99%

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Electron scattering mechanisms in Cu-Mn films for interconnect applications

Misják

Nagy

Lobotka

et al. 2014

Journal of Applied Physics

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Electrical properties and corresponding structural features of Cu-Mn alloy films with potential application as barrier and interconnect layers were studied. Cu-Mn films were deposited by DC magnetron sputtering at room temperature on SiO2 substrates. Electrical resistivity measurements were made as a function of film composition and temperature. The specific resistivity varies linearly with the Mn content showing a maximum of 205 μΩcm at 80 at. % Mn. The temperature coefficient of resistance (TCR) of all alloy films is low, showing non-metallic conductivity for most compositions. Also a minimum TCR has been observed in the 40–80 at. % Mn range which was attributed to a magnetic transformation around 200–300 K. Electrical resistivity measurements are correlated with the film structure revealed by transmission electron microscopy to clarify the phase regions throughout the composition range. In the 20–40 at. % and 70–80 at. % Mn ranges, two-phase structures were identified, where Cu- or Mn-rich solid solution grains were surrounded by a thin amorphous covering layer. Based on the revealed phase regions and morphologies electron scattering mechanisms in the system were evaluated by combining the Matthiessen's rule and the Mayadas-Schatzkes theory. Grain boundary reflectivity coefficients (r = 0.6–0.8) were calculated from fitting the model to the measurements. The proposed model indicates that, in a binary system, the special arrangement of the two phases results in new scattering mechanisms. The results are of value in optimizing the various parameters needed to produce a suitable barrier layer.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Misják

Nagy

Lobotka

et al. 2014

Journal of Applied Physics

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“…1(d), the grain growth and grain boundaries are very clear after annealing at 600 • C for 30 min. Perng et al [31] and our group [32] have reported that impurities in the films affect the grain growth behavior. With increasing Mn concentration in the films [ Fig.…”

Section: Resultsmentioning

confidence: 88%

“…Our previous study [32] showed that the Mn concentration is a key factor in the semiconductor process. In our previous study where CuMn was directly deposited on the dielectric, only Cu-5 at.% Mn film demonstrates the best barrier properties.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Barrier Property of Copper Manganese Alloy on Ruthenium

et al. 2015

IEEE Trans. Device Mater. Relib.

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This paper investigates the properties of CuMn/Ru/ SiO 2 . The optimal concentration of Mn in the CuMn alloy as a barrier layer in this structure is determined. The properties of CuMn/Ru/SiO 2 are compared to those of CuMn/SiO 2 and CuMn/ Ta/SiO 2 . The electrical and material properties of CuMn (0-10 at.% Mn) alloy films deposited on SiO 2 , Ta, and Ru are studied. A diffusion barrier layer self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the CuMn films are analyzed using transmission electron microscopy and are correlated with the electrical properties. After thermal treatment, only Cu-5 at.% Mn/SiO 2 did not exhibit a diffusion of Cu atoms. After annealing, the thermal stability of films grown on Ru/SiO 2 was better than that of films grown on SiO 2 and Ta/SiO 2 . When a Ta or Ru layer was added, the Mn atoms diffused not only to the interface but also to the grain boundaries in the under layer and to the interface between the under layer and SiO 2 . The tolerance of Mn content increased when the Ru layer was used, and thus, CuMn/Ru prevented the diffusion of Cu after heat treatment at 600 • C for 30 min.

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“…A characteristic feature of Mn in Cu is its larger activity coefficient compared with other elements that have limited solubility, such as Al and Mg [7]. However, Mn does not tend to precipitate or segregate within the Cu film but can easily diffuse out to the surface and interface under oxidative conditions [8].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films

Lee

2019

Advances in Materials Science and Engineering

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In this study, we fabricated thin-film resistors using CuMn and yttrium targets by DC/RF magnetron cosputtering. CuMnYresistive thin films were deposited onto glass and Al 2 O 3 substrates. e electrical properties and microstructures of CuMn alloy films with different yttrium content were investigated. e CuMnY films were annealed at temperature ranging from 250°C to 350°C in N 2 atmosphere. e phase variation, microstructure, film thickness, and constitutional analysis of CuMnY films were characterized using X-ray diffraction, field emission scanning, and high-resolution transmission electron microscopy and related energy dispersive X-ray analyses (XRD, FESEM, and HRTEM/EDX). It was found that CuMnY alloy films separated into two parts after annealing. e first part is the MnO phase on the bottom side of the film. e second part is an amorphous structure on the upper side of the film. e MnO phase is a microcrystalline that exists in CuMn films, which is dependent on the Y content and annealing temperature. CuMn alloy films with 15.7% yttrium addition annealed at 300°C exhibited higher resistivity ∼4000 μΩ-cm with − 41 ppm/°C of temperature coefficient of resistance (TCR).

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A study on annealing mechanisms with different manganese contents in CuMn alloy

Cited by 17 publications

References 13 publications

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Investigation of Barrier Property of Copper Manganese Alloy on Ruthenium

The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films

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