A study of x-ray damage effects on the short channel behavior of IGFET’s

Bhattacharya, P. K.; Reisman, Arnold

doi:10.1007/bf02655241

Cited by 10 publications

(5 citation statements)

References 28 publications

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“…The threshold-voltage shift becomes more negative as the channel length decreases. The difference in threshold-voltage shift for channel lengths from 50 to 1.2 pm for process A transistors is 0.30 V and for channel lengths from 10 to 1.2 pm for process B transistors is 0.26 V. This trend in threshold-voltage shift with channel length is consistent with previous data on the channel-length dependence of the radiation response of n-channel transistors [8,9,11].…”

Section: Resultssupporting

confidence: 90%

“…The results of Fig. 1 illustrate a general trend that we have observed for several technologies, and is consistent with previous work reported in the literature [8,9,11]. Specifically, n-channel transistors with shorter gate lengths tend to show more negative thresholdvoltage shifts during irradiation than devices with longer gate lengths.…”

Section: Discussionsupporting

confidence: 90%

“…Previous studies of changes in radiation response associated with changes in channel length have shown more negative threshold-voltage shifts, AVh, after irradiation as transistor channel lengths are decreased [8,9]. To explain this dependence, Schrankler et al [SI developed a simple "charge-sharing" model which suggested that changes in threshold-voltage shifts in short-channel transistors could be predicted from changes in threshold-voltage shifts in long-channel transistors by applying a single scaling factor which depends solely on device geometry and doping.…”

Section: Discussionmentioning

confidence: 99%

“…9 are similar to the results reported in Refs. [8] and [9] in that the thresholdvoltage shifted more negatively as the channel length was decreased. However, the results differ from those presented by Scarpulla et al [ Finally, we conclude this section with a discussion of charge-pumping data taken on the process A transistors in Fig.…”

mentioning

confidence: 97%

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Effects of device scaling and geometry on MOS radiation hardness assurance

Shaneyfelt

Fleetwood

Winokur

et al. 1993

IEEE Trans. Nucl. Sci.

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In this work we investigate the effects of transistor scaling and geometry on radiation hardness. The totaldose response is shown to depend strongly on transistor channel length. Specifically, transistors with shorter gate lengths tend to show more negative threshold-voltage shifts during irradiation than transistors with longer gate lengths. Similarly, transistors with longer gate lengths tend to show more positive threshold-voltage shifts during postirradiation annealing than transistors with shorter gate lengths. These differences in radiation response, caused by differences in transistor size and geometry, will be important to factor into test-structureto-IC correlations necessary to support cost-effective Qualified Manufacturers List (QML) hardness assurance. Transistors with minimum gate length (more negative AVJ will have a larger effect on "standby" power supply current for an IC at high dose rates, such as in a weapon environment, where worst-case response is associated with negative threshold-voltage shifts during irradiation. On the other hand, transistors with maximum gate length (more positive AV,h) will have a larger effect on the timing parameters of an IC at low dose rates, such as in a space environment, where worst-case response is represented by positive threshold-voltage shifts after postirradiation anneal. The channel size and geometry effects we observe cannot be predicted from simple scaling models, but occur because of real differences in oxide-, interface-, and border-trap charge densities among devices of different sizes. * This work performed at Sandia National Laboratories was supported by the U.S. Department of Energy under contract number DE-AC04-76DP00789, and by the Defense Nuclear Agency through its hardness assurance program.

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Section: Resultssupporting

confidence: 90%

Section: Discussionsupporting

confidence: 90%

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 97%

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Effects of device scaling and geometry on MOS radiation hardness assurance

Shaneyfelt

Fleetwood

Winokur

et al. 1993

IEEE Trans. Nucl. Sci.

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“…It is possible that energetic species (ions, electrons, and X‐rays) generated during EBE evaporation excite the traps and defects, causing significant damage to the HfO 2 dielectric far below the surface. [ 44–48 ] During the TG deposition by either e‐beam or thermal evaporation, the chamber temperature is keep below 45 °C, which indicates the absence of high‐temperature assisted annealing effect. Moreover, the device with graphene TG exhibits a notable p‐doping effect on BG transfer (right plot in Figure 4a), which shifts V th positively.…”

Section: Introductionmentioning

confidence: 99%

Gate Stack Engineering in MoS₂ Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Sheng

Chen

Liao

et al. 2020

Adv Elect Materials

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2D transition metal dichalcogenides (TMDs) are promising semiconductive films for applications in future devices due to their prosperous and tunable band structures. However, most TMD‐based top gate transistors suffer from a significant doping effect in the channel due to the subsequent deposition high‐k dielectric layer and metal gate, which limits their practical applications. In this work, the channel doping effect caused by various processing steps based on mechanical exfoliated MoS2 sheets is systematically investigated. This work illustrates a clear correlation among these steps and provides a simple and efficient methodology to realize high‐performance enhancement mode MoS2 field effect transistors, which can be extended to other 2D materials.

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