A study of via depletion electromigration with very long failure times

Li, Baozhen; Christiansen, C.; Chanda, Kaushik; Angyal, M.; Oakley, J.

doi:10.1109/irps.2011.5784494

Cited by 4 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4. Unlike the typically observed slit void failure mode [10][11][14][15][16][17] from downstream EM test, physical failure analysis revealed trench void for both downstream and upstream stress, as shown in Fig. 5.…”

Section: Resultsmentioning

confidence: 82%

“…From EM failure consideration, via void (void inside via) or trench void (void in the metal stripe) dominate the failure mode in upstream structure [7][8][9]. Whereas, slit void (void beneath via) and trench void are typically observed in downstream structure [10][11]. Voids are rarely seen near the anode side due to potential pile up of metal atoms due to the presence of metal/barrier interface or W plug.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study of a new electromigration failure mechanism by novel test structure

Chen

Lin

Hsieh

et al. 2015

2015 IEEE International Reliability Physics Symposium

View full text Add to dashboard Cite

A novel electromigration (EM) structure is designed and characterized with advanced Cu/low-k technology. Comparing the EM results derived from novel and traditional test structures, a new EM failure mechanism is proposed. The new mechanism is caused by the Cu/barrier interface damage at the metal line-edge during upper Via opening process. This damage provides a fast diffusion path. From the downstream EM test, it is observed that the thicker Ta-based ALD barrier has a higher activation energy and median time to failure compared to thinner Ta based barrier. Thicker barrier process enhances Cu/barrier adhesion and hence prevent the via opening induced interface damage.

show abstract