A Study of Traditional and Surrounding Gate MOSFET using TCAD Simulations

Design and sensitivity analysis of GAA nanowire dopingless FET based label free biosensor

“…When compared to ISFET, DMFET performed the best in terms of detecting both charged and neutral biomolecules [11]. Scaling MOSFETs became perilous as CMOS technology was scaled down to ever smaller nodes, causing MOS devices to encounter critical issues related to Short Channel Effects (SCEs) with poor gate control [12][13][14][15]. Advances in material-based technology that improve semiconductor devices by using graphene, plasmonic techniques, metamaterials, nanoparticles, and negative capacitance for improving materialistic properties such as energy bandgap controlling, quantum well introduction, and the production of ferroelectric domains for use in next generation ICs have piqued the interest of researchers in specific fields [16][17][18].…”