A Study of the Lock Range of Injection-Locked CMOS Active-Inductor Oscillators Using a Linear Control System Approach

Zhou, Yushi; Yuan, Fei

doi:10.1109/tcsii.2011.2164154

Cited by 16 publications

(4 citation statements)

References 11 publications

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“…In order to enhance the PN performance, an injection-locked VCO is introduced in Zhou and Yuan. 3 A PN of −118 dBc/Hz at 1-MHz offset is demonstrated. Nevertheless, the injection-locked signal has to be generated by an external signal source, which makes the system more complex.…”

Section: Introductionmentioning

confidence: 93%

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Design of a CMOS 65‐nm inductor‐less VCO for ISM applications in the VHF band

Gaoding

Bousquet

2020

Circuit Theory & Apps

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Summary This paper presents a design of a CMOS cross‐coupled voltage‐controlled oscillator (VCO) using active inductors (AIs) for wide‐band applications and can also be applied to various wireless technologies standards. The compatibility of this design to different wireless standards highlights its potential to be implemented at the core of the communication front end in the Internet of Things (IoT). The proposed AI design employs a gyrator‐C topology as the basic structure to generate an inductance. The VCO uses a cross‐coupled oscillator structure with a pair of varactors to sweep the frequency. Two extra capacitors, between the AIs and the outputs of the VCO core tank, are employed to enhance the performance of the phase noise and make the VCO work similarly to a linear transconductance (LiT) oscillator. Both the AIs and the VCO are designed in the TSMC 65‐nm CMOS technology, and the performance is analyzed using postsimulation results, as well as through measurements. The fundamental frequency spans from 140 to 463 MHz. Thus, the relative tuning range of this design is approximately 107%. The optimal phase noise of the design is around −97 dBc/Hz at 1‐MHz offset. Furthermore, it achieves an excellent figure of merit (FOM) around −163 dBc/Hz with a direct current (DC) power consumption less than 3 mW. The proposed design shows an advantage in phase noise and power consumption in comparison with previous active inductor VCO and ring VCO designs, respectively. The final layout occupies only 0.4 × 0.62 mm2 including the pads. The proposed AI‐VCO shows a compact size, linear tuning, low power consumption, and good phase noise performance.

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Section: Introductionmentioning

confidence: 93%

“…In order to enhance the PN performance, an injection‐locked VCO is introduced in Zhou and Yuan . A PN of −118 dBc/Hz at 1‐MHz offset is demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Design of a CMOS 65‐nm inductor‐less VCO for ISM applications in the VHF band

Gaoding

Bousquet

2020

Circuit Theory & Apps

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“…From Leeson's classic formula on phase noise, the quality (Q) factor of the tank circuit should be large to improve the oscillator phase noise [14]- [17]. However, high Q-factor oscillators will exhibit limited locking range based on the injected signal and so the tradeoffs between Q, locking range and oscillator phase noise continues to be investigated using considerations such as discussed in various references [18]- [24] Typical RFIC mixer circuits are based on balanced circuits and are of either a single balanced mixer which provides reduction of the LO energy at the output, or double balanced mixers in a similar configuration as the Gilbert cell mixer for reduction of both the LO and RF signals. The resulting intermediate frequency (IF), usually at a lower frequency for receive, may be further amplified and is then digitized at this stage for signal processing.…”

Section: Wireless Sensor Transceiversmentioning

confidence: 99%

Breakthroughs in Microwaves: Increasing Signal Strength in Swarms of Wireless Sensors—An Interview With Dr. Aydin Babakhani

Caverly

2021

IEEE J. Microw.

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This article is the first in the periodic Breakthroughs in Microwaves series. This series is intended to highlight recent accomplishments, especially to those new to the field, by researchers in microwave engineering that hold promise for long-term impact in the field. The articles are written after a conversation with the author so that background information can be provided to understand the breakthrough more fully. This first article looks at the pioneering work of Dr. Aydin Babakhani from UCLA in the USA. Dr. Babakhani's work is a novel application based on oscillator injection locking to synchronize, in the RF domain, the transmit frequency from individual sensors in a sensor swarm so that the individual sensors' signals constructively add at the receiver to increase the overall swarm signal level. The article reviews the loss issues in the system, both path loss for the transmit-receive path as well as for wireless power transfer. The article also provides background on RF integrated circuit transceiver circuits so that the reader can more fully understand the novelty of the RF phase synchronization technique. Finally, the article concludes with a short conversation with Dr. Babakhani that provides further insight into this pioneering technique.

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“…On one hand off-chip inductors significantly reduces the band width and increases the cost but on the other hand the fabrication of spiral inductors calls for a large silicon area. To tackle this scenario the CMOS-based active inductors has emerged as a intensive research area [3] [4]. Apart from the low silicon area, Here the tuning is done, by varying the control gate voltages (Fig.…”

Section: Introductionmentioning

confidence: 99%

Study and comparison of MOSFET and MIGFET-based active inductor

Kumar¹,

Nagarajan²,

Srinivasan³

2013

2013 International Conference on Circuits, Power and Computing Technologies (ICCPCT)

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In this paper, MOSFET-based and MIGFET-based active inductors configured using gyrator principle is studied and their tunability is compared in 45 nm technology node. It is found that MIGFET-based configuration greatly improves the tuning range of the active inductor than MOSFET-based configuration. The tunability range achieved in MIGFET-based active inductor is from 2 GHz to 260 GHz as compared with 25 GHz to 63 GHz in MOSFET-based active inductor configuration.

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A Study of the Lock Range of Injection-Locked CMOS Active-Inductor Oscillators Using a Linear Control System Approach

Cited by 16 publications

References 11 publications

Design of a CMOS 65‐nm inductor‐less VCO for ISM applications in the VHF band

Design of a CMOS 65‐nm inductor‐less VCO for ISM applications in the VHF band

Breakthroughs in Microwaves: Increasing Signal Strength in Swarms of Wireless Sensors—An Interview With Dr. Aydin Babakhani

Study and comparison of MOSFET and MIGFET-based active inductor

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