A study of the growth rate of ZnSe epilayer on GaAs substrate using vapor phase epitaxy

Abstract

ZnSe single crystal layer is deposited onto Cr doping semi-insulating GaAs (100) substrate using the vapor phase transport technique. Growth time, substrate temperature, source temperature, hydrogen flow rate, hydrogen flow rate on Zn reservoir temperature, Zn reservoir temperature, hydrogen flow rate on Se reservoir temperature, and Se reservoir temperature were varied to study the growth rates of epilayers. From the experiment, it can be seen that substrate temperature, source temperature, hydrogen flow rate, hydrogen flow rate on Se reservoir and Se reservoir temperature are the important parameters in the determination of the growth rate of epilayer. The lattice mismatch between epilayer and substrate was less than 0.25%.