A study of the electrical properties of SbSI synthesized using CVD techniques

Dubey, Harish K.; Deshmukh, L. P.; Kshirsagar, Dattatray E.; Sharon, Madhuri; Sharon, Maheshwar

doi:10.5339/connect.2013.40

Cited by 2 publications

(1 citation statement)

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“…Most common are a sonochemical method from elemental antimony, sulfur and iodine, 8,13 hydrothermal deposition in an auto-clave 14 or chemical vapour deposition at high temperatures. 15 These methods have long processing times of 4 h and more 9,15 and result in bulk SbSI crystals.…”

Section: Introductionmentioning

confidence: 99%

Thin film synthesis of SbSI micro-crystals for self-powered photodetectors with rapid time response

Gödel

Steiner

2016

Nanoscale

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We describe a new thin film deposition method for the growth of crystalline SbSI micro-needles via the conversion of Sb2S3 using SbI3 vapour, in a facile process that takes less than 15 minutes. These films were used to construct photodetectors in a sandwich-type architecture, which are superior to previously reported SbSI photodetectors. The devices exhibit a detectivity of D* = 10(9) Jones, a signal-to-noise ratio greater than SNR = 10(3) and a responsivity of R = 10(-5) A W(-1). In time response measurements, raise and fall times of less than 8 ms and 34 ms were determined. This manufacturing method greatly simplifies the creation of fast photodetectors.

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Section: Introductionmentioning

confidence: 99%

Thin film synthesis of SbSI micro-crystals for self-powered photodetectors with rapid time response

Gödel

Steiner

2016

Nanoscale

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Synthesis and Study of Electrical Properties of SbTeI

Dubey¹,

Deshmukh

Kshirsagar³

et al. 2014

Advances in Physical Chemistry

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Needle shaped SbTeI crystals were obtained by solid state reaction. Electrical resistance was measured in the temperature range of 4 K to 550 K. SbTeI shows a metallic behavior from 4 K to 300 K, and at higher temperature (>300 K), it shows semiconducting behavior. Unlike SbSI, this material shows almost zero resistance around 550 K. It shows a piezoelectric behavior with a capacitance of 717 pF and its carrier density and nobilities are found to be 2.12 × 1016 cm−3 and 1.01 cm2/(V·s), respectively. Crystals of SbTeI are characterized by XRD, SEM, and Raman analysis. Electrical activation energy is found to be 0.52 eV. It is suggested that this material may be studied for its application as a superconductor with Tc higher than room temperature.

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A study of the electrical properties of SbSI synthesized using CVD techniques

Cited by 2 publications

References 21 publications

Thin film synthesis of SbSI micro-crystals for self-powered photodetectors with rapid time response

Thin film synthesis of SbSI micro-crystals for self-powered photodetectors with rapid time response

Synthesis and Study of Electrical Properties of SbTeI

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