A Study of the Effect of Oxide Structure on the Synthesis of Nanocrystalline Ge from Si1-xGexO2

Blaser, Juliana; Caragianis-Broadbridge, Christine; Walden, Barbara L.; Paine, David C.

doi:10.1557/proc-398-619

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…But when H 2 is present in the annealing ambient, nucleation can occur. It has been suggested [13] that annealing the co-sputtered silicon oxide plus Ge films in a H 2 containing ambient can cause the incorporation of hydroxyl groups (-OH) into the oxide matrix. The -OH acts as a network modifier in the system as their presence opens up the oxide structure, consequently enhancing the diffusivity of Ge.…”

Section: Effect Of Reductantmentioning

confidence: 99%

Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

et al. 2007

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Germanium (Ge) nanocrystals have been synthesized by annealing co-sputtered SiO2–Ge samples in N2 or forming gas (90% N2+10% H2) at temperatures ranging from 700 to 1000 °C. We concluded that the annealing ambient, temperature and Ge concentration have a significant influence on the formation and evolution of the nanocrystals. We showed that a careful selective etching of the annealed samples in hydrofluoric acid solution enabled the embedded Ge nanocrystals to be liberated from the SiO2 matrix. From the Raman results of the as-grown and the liberated nanocrystals, we established that the nanocrystals generally experienced compressive stress in the oxide matrix and the evolution of these stress states was intimately linked to the distribution, density, size and quality of the Ge nanocrystals.

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Section: Effect Of Reductantmentioning

confidence: 99%

Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

et al. 2007

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Stress development of germanium nanocrystals in silicon oxide matrix

Choi

Chew

Zheng

et al. 2006

Applied Physics Letters

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The authors demonstrate from their Raman and transmission electron microscopy results that the annealing ambient, temperature, and duration play a significant role in the formation, the evolution, and the crystallinity of Ge nanocrystals in silicon oxide matrix. With careful etching experiments, the authors established that the compressive stress experienced by the nanocrystals in the oxide matrix is intimately linked to the density, the size, and the quality of the Ge nanocrystals.

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A cross-sectional atomic force microscopy study of nanocrystalline Ge precipitates in SiO2 formed from metastable Si1−xGexO2

Caragianis-Broadbridge¹,

Blaser²,

Paine³

1997

Journal of Applied Physics

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In recent years, many investigators have reported visible photoluminescence from structures that consist of Ge or Si nanocrystals embedded in a SiO2 matrix deposited or grown on various substrates. We have developed a rapid technique for studying the through-thickness microstructure of this class of materials via atomic force microscopy (AFM) and, using this technique, we report on the precipitation and growth of Ge crystallites formed via a two-step process of hydrothermal oxidation of Si1−xGexO2 (x=0.15) at 450–500 °C and subsequent chemical reduction in forming gas (85/15: N2/H2; 800 °C). The Ge-particle distributions obtained with this AFM cross-sectional technique are consistent with those previously reported using other techniques. The utility of cross-sectional AFM for the evaluation of nanoscale features in the thickness of a thin film is evaluated.

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A Study of the Effect of Oxide Structure on the Synthesis of Nanocrystalline Ge from Si₁-_xGe_xO₂

Cited by 3 publications

References 7 publications

Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

Stress development of germanium nanocrystals in silicon oxide matrix

A cross-sectional atomic force microscopy study of nanocrystalline Ge precipitates in SiO2 formed from metastable Si1−xGexO2

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