A study of the crystal structure of a commercial β-SiC whisker by high-resolution TEM

Li, Geng; Zhang, J

doi:10.1016/s0254-0584(03)00281-5

Cited by 20 publications

(9 citation statements)

References 6 publications

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“…Additional characteristic peaks of the alpha phase emerged at low frequencies (∼260 and 600 cm -1 ). Comparison of the observed spectra to the typical Raman spectra of the most common SiC polytypes (3C, 2H, 4H, 6H, and 15R) reported in the literature 15 suggests that the etched whiskers consist mainly of 4H-SiC. Clearly, the etching dissolved most of the β-SiC present in the as-grown whiskers as shown schematically in Figure 4, leaving stacking fault areas, which can be considered as R-SiC interlayers, behind.…”

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confidence: 66%

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Anisotropic Etching of SiC Whiskers

et al. 2005

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We have demonstrated a method of producing nanoplatelets or complex well-ordered nanostructures from silicon carbide (SiC) whiskers. Preferential etching of SiC whiskers in a mixture of hydrofluoric and nitric acids (3:1 ratio) at 100 degrees C results in the selective removal of cubic SiC and the formation of complex structures resembling a pagoda architecture. Possible mechanisms governing selective etching are discussed. Reproducible results on SiC whiskers manufactured in different laboratories suggest that the self-patterning phenomena are common in SiC whiskers, and the same electroless etching procedure can be used to synthesize various complex nanostructures from more conventional nano- and microscale objects for use as building blocks in the fabrication of sensors, cellular probes, and electronic, optoelectronic, electromechanical, and other devices.

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confidence: 66%

“…The presence of stacking faults in the grown SiC whiskers is a common phenomenon. The extensive studies of various cubic SiC whiskers − revealed that the primary defects in these whiskers are stacking faults distributed periodically (or nearly periodically) on the (111) planes perpendicular to the whisker growth axis.…”

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confidence: 99%

Anisotropic Etching of SiC Whiskers

et al. 2005

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“…The characteristic double diffraction spots and streaks in the SAED pattern reveal the presence of twins and stacking faults, respectively. [43][44][45] No appreciable grain growth occurred during hot pressing as SiC and ZrB 2 grain sizes remain the same as those of the initial particles.…”

Section: Methodsmentioning

confidence: 97%

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite

Jayaseelan

Wang

Hilmas

et al. 2011

Advances in Applied Ceramics

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The polytypism of SiC, phase transformation of ZrB 2 and the interfaces between SiC and ZrB 2 were investigated using high resolution TEM in a hot pressed 10 vol.%SiC-ZrB 2 composite. In most cases, no grain boundary interphases between hexagonal ZrB 2 and 6H-SiC phases were observed with SiC being both inter-and intragranular. Occasionally, 6H-SiC transformed into 3C and 15R and hexagonal ZrB 2 transformed into cubic ZrB. High resolution TEM showed no grain boundary interphases in most regions. Energy dispersive X-ray spectroscopy and electron energy-loss spectroscopy analyses showed the presence of oxygen throughout the sample. The phase transformation of SiC and ZrB 2 , and the interphase formation between SiC and ZrB 2 grains are discussed.

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“…Thus, the hardness and flexture strength of the sample were higher. Moreover, the strength of SiC w is higher than that of cBN . So the strength of PcBN composites should be improved based on the composite principle.…”

Section: Resultsmentioning

confidence: 99%

Processing and properties of polycrystalline cubic boron nitride reinforced by SiC whiskers

Shao

et al. 2018

Int J Applied Ceramic Tech

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Dense polycrystalline cBN (PcBN)–SiCw composites were fabricated by a two‐step method: First, SiO2 was coated on the surface of cubic boron nitride (cBN) particles by the sol‐gel method. Then, silicon carbide whisker (SiCw)‐ coated cBN powder was prepared by carbon thermal reaction between SiO2 and carbon powders at 1500°C for 2 hour. Then, cBN–SiCw complex powders were sintered by high‐pressure and high‐temperature sintering technology using Al, B, and C as sintering additives. The phase compositions and microstructures of cBN–SiCw composites were investigated by X‐ray diffraction and scanning electron microscopy, respectively. It was found that the SiCw and Al3BC3 had been fabricated by in situ reaction, which cannot only promote densification but also improve mechanical properties. The relative density of PcBN composites increased from 96.3% to 99.4% with increasing SiCw contents from 5 to 20 wt%. Meanwhile, the Vickers hardness, fracture toughness and flexural strength of as‐obtained composites exhibited a similar trend as that of relative density. The composite contained 20 wt% of SiCw exhibited the highest Vickers hardness and fracture toughness of 42.7 ± 1.9 GPa and 6.52 ± 0.21 MPa•m1/2, respectively. At the same time, the flexural strength reached 406 ± 21 MPa.

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A study of the crystal structure of a commercial β-SiC whisker by high-resolution TEM

Cited by 20 publications

References 6 publications

Anisotropic Etching of SiC Whiskers

Anisotropic Etching of SiC Whiskers

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite

Processing and properties of polycrystalline cubic boron nitride reinforced by SiC whiskers

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A study of the crystal structure of a commercial β-SiC whisker by high-resolution TEM

Cited by 20 publications

References 6 publications

Anisotropic Etching of SiC Whiskers

Anisotropic Etching of SiC Whiskers

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB2composite

Processing and properties of polycrystalline cubic boron nitride reinforced by SiC whiskers

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Product

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TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite