A Study of the Absorption Edge of ZnO Thin Films Prepared by the Spray Pyrolysis Method

Ikhmayies, Shadia J.

doi:10.1007/978-3-030-65493-1_8

Cited by 1 publication

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“…It has also been observed that the absorption edge moves down in energy as the film thickens and increases. The evolution of this change is associated with the fact that grain size grows in tandem with film thickness [81]. This increase in sulphur concentration is accompanied by a decrease in the bandgap, in addition to defects in the crystal lattice.…”

Section: Mechanismmentioning

confidence: 99%

Mechanism of Chemical Bath Deposition of CdS Thin Films: Influence of Sulphur Precursor Concentration on Microstructural and Optoelectronic Characterizations

Najm

Naeem

Alwarid³

et al. 2022

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In this study, we aimed to improve our understanding of the response mechanisms associated with the formation of CdS thin films. CdS thin film remains the most valuable option for many researchers, since it has shown to be an effective buffer material for film-based polycrystalline solar cells (CdTe, CIGSe, CZTS). We performed experimental and numerical simulations to investigate the effect of different thiourea concentrations on the characteristics of the CdS buffer layer. The experimental results reveal that an increase in thiourea concentrations had a direct effect on the optical results, with bandgap values ranging from (2.32 to 2.43) eV. XRD analysis confirmed that all deposited films were polycrystalline, except for [1/0.75], where there is no CdS formation. Electrical studies indicated that CdS with a molar ratio of [Cd]/[S] of 1 had the maximum carrier concentration (3.21 × 1014 cm−3) and lowest resistivity (1843.9 Ω·cm). Based on the proposed mechanism, three kinds of mechanisms are involved in the formation of CdS layers. Among them, the ion-by-ion mechanism has a significant effect on the formation of CdS films. Besides, modelling studies reveal that the optic-electrical properties of the buffer layer play a crucial role in influencing the performance of a CIGS solar cell.

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Section: Mechanismmentioning

confidence: 99%