1997
DOI: 10.1109/4.634671
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A study of pipeline architectures for high-speed synchronous DRAMs

Abstract: The performances of SDRAM's with different pipeline architectures are examined analytically on the basis of the time required to refill the on-chip cache of a Pentium CPU. The analysis shows that the cycle time of the conventional pipeline structures cannot be reduced because of its difficulty in distributing the access time evenly to each pipeline stage of the column address access path. On the contrary, the wave pipeline architecture can make the access path evenly divided and can increase the number of pipe… Show more

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Cited by 12 publications
(2 citation statements)
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“…SRAM has about four times faster random access times, and traditionally consumes the lowest standby power per bit (to below 1 pW/bit [73]). From recent developments, such as synchronous DRAM (SDRAM) using pipelined highspeed data transfer [83][84][85][86], standby power reduction through proper cell biasing techniques and optimized self-refresh timing [74], silicon-on-insulator (SOI) technology [87][88][89], novel dielectric materials [90], new high-speed interfaces [91][92][93]82], variable/dynamic-V T transistor circuits for sub-1-V operation [94][95][96][97], and the increasing value of memorycell density with the advent of the Ôsystem-on-a-chip' [98], it appears that DRAM will remain the memory backbone for future generations of silicon processors.…”
Section: Semiconductor Memorymentioning
confidence: 99%
“…SRAM has about four times faster random access times, and traditionally consumes the lowest standby power per bit (to below 1 pW/bit [73]). From recent developments, such as synchronous DRAM (SDRAM) using pipelined highspeed data transfer [83][84][85][86], standby power reduction through proper cell biasing techniques and optimized self-refresh timing [74], silicon-on-insulator (SOI) technology [87][88][89], novel dielectric materials [90], new high-speed interfaces [91][92][93]82], variable/dynamic-V T transistor circuits for sub-1-V operation [94][95][96][97], and the increasing value of memorycell density with the advent of the Ôsystem-on-a-chip' [98], it appears that DRAM will remain the memory backbone for future generations of silicon processors.…”
Section: Semiconductor Memorymentioning
confidence: 99%
“…[ 1,4] On the other approach, many cache SRAM's adopting variable pipeline schemes have been proposed. [3] As a result, recently, the access time has been improved to 1.811s -2.5ns. [2,5].…”
Section: Introductionmentioning
confidence: 99%