A study of Joule heating-induced breakdown of carbon nanotube interconnects

Santini, Claudia; Vereecken, Philippe M.; Volodin, Alexander M.; Groeseneken, G.; Gendt, Stefan De; Haesendonck, Chris Van

doi:10.1088/0957-4484/22/39/395202

Cited by 42 publications

(35 citation statements)

References 47 publications

(80 reference statements)

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“…In CNT fibers, current-induced Joule heating damages and ultimately breaks the fibers 31,32 . Figure 5a shows an SEM image of MF5 after electrical breakdown following the ampacity measurement.…”

Section: Discussionmentioning

confidence: 99%

Metal nanofibrils embedded in long free-standing carbon nanotube fibers with a high critical current density

Rho

Park

et al. 2018

NPG Asia Mater

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With the growth of nanoelectronics, the importance of thermal management in device packaging and the improvement of high-current-carrying interconnects/wires for avoiding the premature failure of devices have been emphasized. The heat and electrical transport properties of the bulk may not be valid in the characterization of a material at the nanometer level, because the phenomena that occur at the interfaces and grain boundaries become dominant. The failure mechanism of bulk metal interconnects has been understood in the context of electromigration; however, in nanoscale materials, the effect of the heat dissipation that occurs at the nanointerfaces may play an important role. Here, we report the preparation of continuous carbon nanotube (CNT)-Cu composite fibers that possess Cu nanofibrillar structures with a high current-carrying capacity. Various-shaped CNT-Cu microfibers with different Cu grain morphologies were produced via Cu electroplating on continuous CNT fibers. Cu fibril structures were embedded in the voids inside the CNT fiber during the early stage of electrodeposition. The temperaturedependent and magnetic field-dependent electrical properties and the ampacity of the produced CNT-Cu microfibers were measured, and the failure mechanism of the fiber was discussed. The interconnection of Cu nanograins on the surface of the individual CNTs contributed to the enhancement in the charge-carrying ability of the fiber. The effective ampacity of the Cu nanofibrils was estimated to be~1 × 10 7 A/cm 2 , which is approximately 50 times larger than the ampacity measured for a bulk Cu microwire.

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Section: Discussionmentioning

confidence: 99%

Metal nanofibrils embedded in long free-standing carbon nanotube fibers with a high critical current density

Rho

Park

et al. 2018

NPG Asia Mater

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“…The issue of heating in biased molecular junctions has attracted considerable recent experimental and theoretical attention, motivated by the relevance of this phenomenon to current induced chemical change and to junction stability. 78,79 This issue was addressed theoretically by several workers, [80][81][82][83][84][85][86][87][88][89][90][91][92][93][94][95][96][97][98] however the experimental observation of such heating 12,13,[99][100][101][102][103][104][105] depends on finding a suitable probe. First attempt to estimate junction heating 100,101 have used the threshold for bond breaking under tension as such a probe.…”

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confidence: 99%

Raman scattering from biased molecular conduction junctions: The electronic background and its temperature

Galperin

Nitzan

2011

Phys. Rev. B

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The existence of background in the surface enhanced Raman scattering (SERS) from molecules adsorbed on metal surfaces is known since the early studies this phenomenon, and is usually attributed to transitions between electronic states of the metal substrate. This paper reformulates the theory of this phenomenon in the framework of the non-equilibrium Green function (NEGF) formalism, which makes it possible to extend it to the case of Raman scattering from non-equilibrium (biased and current carrying) molecular junctions. Following recent experiments, we address in particular the Raman scattering measurement of current induced electronic heating. The Raman temperature, defined by fitting the ratio between the Stokes and anti-Stokes Raman signals to a Boltzmann factor is compared to another measure of electronic heating obtained by assuming that close to the molecule-metal contact the electronic distribution is dominated by the transmission process. We find that the Raman temperature considerably exceed this upper bound to the metal-electrons heating. In agreement with this observation we show that the Raman temperature reflects the electronic non-equilibrium in the molecular bridge itself. We also show that the Raman temperature concept breaks down at large bias.

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“…However, if the SWNT in the device is suspended partially as displayed in Figure 1a–d, the situation is quite different. Since the thermal conductivity of air is quite smaller than silicon dioxide, the Joule heating is more liable to congregate at the suspended section of the SWNT 21, 33, 34. Thus, the nanoscale gaps can be controllably created adjacent to the electrodes at a sub‐40 nm wide region (sections ii and iv in Figure 1b–d).…”

Section: Resultsmentioning

confidence: 99%

“…Electroburning method has been used to create nanogaps in carbon nanotubes, which shows the disadvantage of uncontrollable position of the gaps 21. Alternatively, some other strategies are introduced to create nanogaps in carbon nanotubes, such as electron beam lithography and atomic force microscopy (AFM),6, 8, 22 which can precisely control the position of the nanogaps.…”

Section: Introductionmentioning

confidence: 99%

Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

Zhang

Deng

et al. 2017

Advanced Science

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Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub‐5 nm nanogaped single‐walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10−19 J bit−1), ON/OFF ratio of 105, stable switching ON operations, and over 30 h retention time in ambient conditions.

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A study of Joule heating-induced breakdown of carbon nanotube interconnects

Cited by 42 publications

References 47 publications

Metal nanofibrils embedded in long free-standing carbon nanotube fibers with a high critical current density

Metal nanofibrils embedded in long free-standing carbon nanotube fibers with a high critical current density

Raman scattering from biased molecular conduction junctions: The electronic background and its temperature

Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

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