A study of hydrogen implanted in aluminium

Bugeat, J.P.; Chami, A.C.; Ligeon, E.

doi:10.1016/0375-9601(76)90520-x

Cited by 103 publications

(12 citation statements)

References 8 publications

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“…9 shows results for D implanted in A1 at 33 K by Bugeat et a]. [21]. Although results 1vit.h implanted specimens in some cases are influenced by t,he inter- 100)).…”

Section: Lattice Loratiotimentioning

confidence: 96%

Interstitial positions and vibrational amplitudes of hydrogen in metals investigated by fast ion channeling

Cabstanjen¹

1980

Phys. Stat. Sol. (a)

107

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“…9 shows results for D implanted in A1 at 33 K by Bugeat et a]. [21]. Although results 1vit.h implanted specimens in some cases are influenced by t,he inter- 100)).…”

Section: Lattice Loratiotimentioning

confidence: 96%

Interstitial positions and vibrational amplitudes of hydrogen in metals investigated by fast ion channeling

Cabstanjen¹

1980

Phys. Stat. Sol. (a)

107

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“…The origin of the enhanced equilibrium vacancy concentration lies on a significant binding and on the possibility of multiple occupancy of the vacancy by the solute. Indeed, it is known experimentally for a long time (Bugeat et al (1976)) that H is not centered in the vacancy. In the eighties, Effective Medium Theory came to a good agreement with experiments and gave a simple and clear picture of H in metals (for a review see (Nørskov & Besenbacher (1987) (2009)).…”

Section: Interstitial-vacancy Clusters Simulations In the Grand Canonmentioning

confidence: 99%

Monte Carlo Methodology for Grand Canonical Simulations of Vacancies at Crystalline Defects

Tanguy¹

2011

Applications of Monte Carlo Method in Science and Engineering

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“…[25][26][27][28] It was also pointed out that even a small amount of an impurity drastically affects the hydrogen trapping. [29][30][31][32][33][34] That is, hydrogen is trapped by vacancies, by dangling bonds of both implanted and matrix elements, and at grain boundaries if the implanted elements segregate in the matrix.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen behavior in SiO2 with high density of defects and locally concentrated silicon

Ikeda

Nakagawa

Mitsusue

et al. 2004

Journal of Applied Physics

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Using ion implantation techniques, we have studied the trapping, detrapping, and diffusion of H in SiO2 containing a high density of defects and a high concentration of excess Si. In SiO2 sample implanted with Si and H, the implanted H moves toward the surface after stopping at the projected range, and is trapped by vacancies and silicon dangling bonds. If the Si-implanted SiO2 is annealed to 1423 K prior to H implantation, the trap sites changes from the Si–H bonds in the unannealed sample to the dangling bonds at the nanocrystalline interfaces. The dependence of retention and trapping site of hydrogen on the Si implantation showed that, irrespective of the preannealing, the retention of hydrogen rapidly increases above a dose of 1×1017 Si/cm2 and then levels off, and the trapping site for 6×1017 Si/cm2 is distinctly different from that for 3×1017 Si/cm2. A possible reason for the latter result is that, in the case of the unannealed sample, the implanted silicon atoms coagulate to form clusters at 6×1017 Si/cm2 and hydrogen is trapped by the defects inside the silicon clusters. In the case of the annealed sample, the volume fraction of the silicon nanocrystals becomes large for the 6×1017 Si/cm2 implantation and, as a result, the fraction of the V–H complex inside the nanocrystals increases.

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A study of hydrogen implanted in aluminium

Cited by 103 publications

References 8 publications

Interstitial positions and vibrational amplitudes of hydrogen in metals investigated by fast ion channeling

Interstitial positions and vibrational amplitudes of hydrogen in metals investigated by fast ion channeling

Monte Carlo Methodology for Grand Canonical Simulations of Vacancies at Crystalline Defects

Hydrogen behavior in SiO2 with high density of defects and locally concentrated silicon

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