A Study of How Different FIB Beam Current Intensities Locate Possible Defects

Abstract

Voltage contrast (VC) is a useful technique and used widely in failure analysis of integrated circuit (ICs). This paper will demonstrate different FIB current intensities in a specific VC case and, by means of the technique, locate possible defect sites quickly. With the help of conductive atomic force microscopy (C-AFM), we can get an electrical verification at the same time. We discuss the relationship of VC and C-AFM as well as what the root cause of failure is in this case.