1999
DOI: 10.1016/s0169-4332(98)00479-6
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A study of HMDSO/O2 plasma deposits using a high-sensitivity and -energy resolution XPS instrument: curve fitting of the Si 2p core level

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Cited by 309 publications
(152 citation statements)
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“…The five Si oxidation states were fit with symmetric Gaussian/Lorentzian product peaks with a mixing parameter of 10 (mixing of 0/100 gives a pure Gaussian/pure Lorentzian line shape). Positions for the Si(0), Si( þ 1), Si( þ 2), Si( þ 3) and Si( þ 4) components were chosen based on literature values and allowed to vary by 0.1 eV during fitting, while the peak width was allowed to vary approximately within the bounds established by the literature 42,43,[67][68][69] . Photocatalytic hydrogen evolution.…”
Section: Methodsmentioning
confidence: 99%
“…The five Si oxidation states were fit with symmetric Gaussian/Lorentzian product peaks with a mixing parameter of 10 (mixing of 0/100 gives a pure Gaussian/pure Lorentzian line shape). Positions for the Si(0), Si( þ 1), Si( þ 2), Si( þ 3) and Si( þ 4) components were chosen based on literature values and allowed to vary by 0.1 eV during fitting, while the peak width was allowed to vary approximately within the bounds established by the literature 42,43,[67][68][69] . Photocatalytic hydrogen evolution.…”
Section: Methodsmentioning
confidence: 99%
“…XPS spectra were calibrated using the main C1s peak component, which is well characterised in the literature. Works in the literature specify spectra of DLC films should be calibrated to the hydrocarbon (CHx) peak at 284.4 eV (19)(20)(21)(22). Calibration shifted the spectrum by 1.2 eV, correcting for charging issues.…”
Section: X-ray Photoelectron Spectroscopy (Xps)mentioning
confidence: 99%
“…In the case of g-FOTES, the C 1 s signal was a convolution of five components at 285.2 eV, originating from C-C and C-Si [44][45][46], and at 286.5, 291.5, 294.0, and 288.0 eV attributable to C-O [39], -CF 2 and -CF 3 groups [39,44,45], as well as a contamination component, respectively (Figure 4c). Two components for the Si 2p signal at 102.9 and 103.7 eV were ascribed to Si-C [47,48] and glass [49], as shown in Figure 4f.…”
Section: Resultsmentioning
confidence: 99%