A study of highly crystalline novel beryllium oxide film using atomic layer deposition

Yum, Jung Hwan; Akyol, T.; Lei, Ming; Ferrer, Domingo; Hudnall, Todd W.; Downer, M. C.; Bielawski, Christopher W.; Bersuker, G.; Lee, J. C.; Banerjee, Sanjay K.

doi:10.1016/j.jcrysgro.2011.08.040

Cited by 30 publications

(24 citation statements)

References 13 publications

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“…As shown in Fig. 9a, the diffraction peaks at 38.41, 41.21 and 43.91 are attributed to beryllium oxide, according to the JCPDS card no.78-1553 and previous reports [38,39]. The featured diffraction peaks of (PbCO 3 ) 2 Á Pb(OH) 2 located at 24.71, 27.31, 34.11, 40.41, 43.01, and 42.61 disappear along with the lithiation process.…”

Section: Resultssupporting

confidence: 67%

Preparation and characterization of basic carbonates as novel anode materials for lithium-ion batteries

Shao¹,

Wu²,

Jiang³

et al. 2014

Ceramics International

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Section: Resultssupporting

confidence: 67%

Preparation and characterization of basic carbonates as novel anode materials for lithium-ion batteries

Shao¹,

Wu²,

Jiang³

et al. 2014

Ceramics International

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“…• C. [122][123][124] Due to the significantly lower deposition temperature, the ALD BeO film was given an additional rapid thermal anneal to 600…”

Section: Methodsmentioning

confidence: 99%

“…• C has been additionally shown to crystallize or improve the crystallinity of ALD or PEALD deposited HfO 2 , 93 BeO, 122 and AlN 158 films. In contrast, amorphous ALD/PEALD Al 2 O 3 films have proven more difficult to crystallize via post-deposition annealing with temperatures of 800-1000…”

Section: N194mentioning

confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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“…430 In fabrication of Be ALD precursors, it has been clearly noted that beryllium compounds are highly toxic and should be carefully handled in fume hoods at all times. 431 Utilization of a Be compound as a DB, ES, or HM may require similar B network materials.-B follows Be on the periodic table and also forms stable oxide, nitride, and carbide compounds. [433][434][435] Boron oxide (B 2 O 3 ) may be a potential low-k dielectric, but it is difficult to obtain accurate k values for this material due to an extremely hygroscopic behavior.…”

mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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A study of highly crystalline novel beryllium oxide film using atomic layer deposition

Cited by 30 publications

References 13 publications

Preparation and characterization of basic carbonates as novel anode materials for lithium-ion batteries

Preparation and characterization of basic carbonates as novel anode materials for lithium-ion batteries

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

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