A Study of Field-Ring Design using a Variety of Analysis Method in Insulated Gate Bipolar Transistor (IGBT)

Abstract

-Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.

Electric field enhancement control in active junction of IGBT power module

“…It is necessary to have an edge termination structure that will reduce the electric field crowding at the diode and IGBT edges. 13,14 A termination design based on the biased ring concept was employed in the design of the HV diode/IGBT chips. A diode was viewed under a microscope and the width of the guard rings and the gaps between the rings served as a guide in the simulation of the diodes guard rings and edge termination.…”

“…To design a system with breakdown voltage having a higher field ring, the depth of junction should be as deep as possible. 14 The depth of the p-well (junction) in the diode was assumed to be 20 µm. Figure 2 shows the meshed field limiting ring (also shown schematically in Figure 1) that divides the entire space into a small rectangular size for calculation using the FEM.…”