A study of electron beam‐induced conductivity in resists

Hwu, Justin J.; Joy, David C.

doi:10.1002/sca.4950210406

Cited by 13 publications

(2 citation statements)

References 27 publications

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“…Breakdown effects are taken into account by limiting the field in the sample. Other authors (Hwu and Joy 1999) have extended the calculation to the charge transport in the insulator when the internal field is comparable with the breakdown field.…”

Section: Self-consistent Calculationmentioning

confidence: 99%

Simulations of scanning electron microscopy imaging and charging of insulating structures

2003

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Summary:We present a three-dimensional simulation of scanning electron microscope (SEM) images and surface charging. First, the field above the sample is calculated using Laplace's equation with the proper boundary conditions; then, the simulation algorithm starts following the electron trajectory outside the sample by using electron ray tracing. When the electron collides with the specimen, the algorithm keeps track of the electron inside the sample by simulating the electron scattering history with a Monte Carlo code. During this phase, secondary and backscattered electrons are emitted to form an image and primary electrons are absorbed; therefore, a charge density is formed in the material. This charge density is used to recalculate the field above and inside the sample by solving the Poisson equation with the proper boundary conditions. Field equation, Monte Carlo scattering simulation, and electron ray tracing are therefore integrated in a self-consistent fashion to form an algorithm capable of simulating charging and imaging of insulating structures. To maintain generality, this algorithm has been implemented in three dimensions. We shall apply the so-defined simulation to calculate both the global surface voltage and local microfields induced by the scanning beam. Furthermore, we shall show how charging affects resolution and image formation in general and how its characteristics change when imaging parameters are changed. We shall address magnification, scanning strategy, and applied field. The results, compared with experiments, clearly indicate that charging and the proper boundary conditions must be included in order to simulate images of insulating features. Furthermore, we shall show that a three-dimensional implementation is mandatory for understanding local field formation.

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Section: Self-consistent Calculationmentioning

confidence: 99%

Simulations of scanning electron microscopy imaging and charging of insulating structures

2003

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“…In the literature, modeling studies using Monte Carlo simulations are reported, which are aimed at providing a general solution for a given layout prior to the experimental fabrication. [17][18][19][20] However, these studies are either based on empirical electron-matter scattering models or do not take charge redistribution into account.…”

Section: Introductionmentioning

confidence: 99%

Charge-induced pattern displacement in E-beam lithography

Arat

Klimpel

Zonnevylle³

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Electron beam lithography (EBL) requires conducting substrates to ensure pattern fidelity. However, there is an increasing interest in performing EBL on less well-conducting surfaces or even insulators, usually resulting in seriously distorted pattern formation. To understand the underlying charging phenomena, the authors use Monte Carlo simulations that include models for substrate charging, electron beam-induced current, and electric breakdown. Simulations of electron beam exposure of glass wafers are presented, exposing regular patterns which become distorted due to charge-induced beam deflection. The resulting displacements within the patterns are mapped and compared to experimental displacement maps obtained from patterns in PMMA resist on glass substrates. Displacements up to several hundreds of nanometers were observed at a primary beam energy of 50 keV. Also, various scan strategies were used to write the patterns, in the simulations as well as the experiments, revealing their strong effect on pattern distortion, in shape and in magnitude. A qualitative, in some cases even quantitative, good agreement was found between the simulations and the experiments, providing enough confidence in Monte Carlo simulations to predict charge-induced pattern displacement and shape distortion and to find smart scan strategies to minimize the effects of charging.

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Self-consistent charging in dielectric films under defocused electron beam irradiation

Xia

2011

Micron

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A study of electron beam‐induced conductivity in resists

Cited by 13 publications

References 27 publications

Simulations of scanning electron microscopy imaging and charging of insulating structures

Simulations of scanning electron microscopy imaging and charging of insulating structures

Charge-induced pattern displacement in E-beam lithography

Self-consistent charging in dielectric films under defocused electron beam irradiation

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