A Study of Electrical Properties of SiGe Film with Various Oxidation Conditions

Abstract

In this study, various oxidation conditions were performed of SiGe film, and a conventional p-type thin-film-transistor (TFT) was fabricated on it. I-V characteristics were measured to investigate the influence on electrical properties of the various oxidation conditions. It is found that the devices of higher oxidation temperature, longer oxidation time, and higher oxygen flow show better electrical performance. It is also found that devices under lower oxidation rate have lower leakage current and then induce higher On/Off ratio.