A study of chemical beam epitaxy of GaAs using tris-dimethylaminoarsenic

A kinetic model for tris(dimethylamino) arsine decomposition on GaAs(100) surfaces

“…1 and 4, the peak of H 2 C = NCH 3 desorption at 280°C corresponds to a low H coverage on the surface. This result can be explained in terms of hydrogen recombination controlling available sites for β-hydrogen elimination reactions (5)- (7). All H 2 atoms desorbing from the surface result from recombination of hydrogen atoms transferred to the surface.…”

“…The activation energy for reaction (6) is assumed to be equal to that for reaction (7). This assumption is the same as that determined by Donnelly and Robertson 17 for Ga(C 2 H 5 ) 2 (ads) and GaC 2 H 5 (ads) dissociation in the process of TEGa decomposition on GaAs(100).…”

“…But these ligands may be very weakly bound to the surface so that they start desorbing immediately from the surface at a low enough temperature before reactions between themselves and reactions (5) to (9) kick in, since Xi et al 15 showed that the possibility could be eliminated of (CH 3 ) 2 NH being formed by recombination with surface H atoms and by H atom transfer between dimethylamino ligands. The breaking-away of these ligands from the parent may produce the surface sites necessary for initial onset of reactions (5) to (7). The overall process of scission of the arsenic-nitrogen bond and desorption of dimethylamino radicals can thus be represented by reactions (1) to (4).…”

“…In addition, carbon was reduced more than two orders of magnitude in GaAs films grown with TMGa and TDMAAs as compared to TMGa and AsH 3 . TDMAAs has also been utilized in atomic layer epitaxy (ALE) of GaAs and AlAs, 4-6 Dong et al [7][8][9][10] achieved better electrical properties of GaAs grown using TEGa and TDMAAs than those of GaAs samples reported by other groups. Their laser-assisted growth of GaAs with TEGa and TDMAAs showed a wider range of growth enhancement at lower substrate temperatures.…”