A study for designing an ESL-cancelling circuit for shunt capacitor filters based on the biot-savart law

Yoneda, Satoshi; Hirose, Keikichi; Kobayashi, Akihto; Sasaki, Y.; Miyazaki, Chiharu

doi:10.1109/isemc.2017.8077834

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…In [1], diagonally and shunt-connected two film capacitors called "X-capacitor-inductor structure" is reported which can be equivalently transformed by network theory into a one shunt-path circuit containing a negative inductance to cancel ESL. In [2]- [7], negative inductance is equivalently added in series to the shunt-path by magnetic coupling between various circuit components: a main line and a shunt-path [2], loops configured by via holes and lines connected to chip capacitors [3], a spiral-shaped line and a line connected to a three-terminal chip capacitor [4], vertically stacked coupled square loops [5], a chip capacitor itself and a main line [6], and a chip capacitor itself and bilateral lines adjacent to the capacitor [7].…”

Section: Introductionmentioning

confidence: 99%

An ESL-Cancelling Circuit for a Shunt-Connected Film Capacitor Filter Using Vertically Stacked Coupled Square Loops

YONEDA,

KOBAYASHI,

TANIGUCHI

2023

IEICE Trans. Commun.

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An ESL-cancelling circuit for a shunt-connected film capacitor filter using vertically stacked coupled square loops is reported in this paper. The circuit is applicable for a shunt-connected capacitor filter whose equivalent series inductance (ESL) of the shunt-path causes deterioration of filter performance at frequencies above the self-resonant frequency. Two pairs of vertically stacked magnetically coupled square loops are used in the circuit those can equivalently add negative inductance in series to the shunt-path to cancel ESL for improvement of the filter performance. The ESL-cancelling circuit for a 1-µF film capacitor was designed according to the Biot-Savart law and electromagnetic (EM)-analysis, and the prototype was fabricated with an FR4 substrate. The measured result showed 20-dB improvement of the filter performance above the selfresonant frequency as designed, satisfying S dd21 less than −40 dB at 1 MHz to 100 MHz. This result is almost equivalent to reduce ESL of the shuntpath to less than 1 nH at 100 MHz and is also difficult to realize using any kind of a single bulky film capacitor without cancelling ESL.

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