A strategy of synergistic optimization: gold and lithium co-doped vanadium oxide as a hole-injection layer for high-performance OLEDs

Zhang, Han; Zhu, Wenqing; Huang, Lu; Chen, Yi; Chen, Ruilin; Chen, Yipeng; Li, Jun

doi:10.1039/d2tc03121c

Cited by 3 publications

(1 citation statement)

References 53 publications

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“…Solution-processed VO x HILs in OLEDs have also been reported to be advantageous. − In addition to OPV devices, OLED devices made with VO x as the HIL were fabricated and contrasted with devices made with PEDOT:PSS, using an architecture of ITO/HTL/super yellow /PFN/Ag; these were fabricated in a manner similar to OPV devices. Estimated layer thicknesses are PEDOT:PSS: 30 nm, VO x : 5 nm, super yellow: 80 nm, PFN: 10 nm, and Ag: 100 nm.…”

Section: Resultsmentioning

confidence: 99%

Room-Temperature Photodeposited Amorphous VO_x Hole-Transport Layers for Organic Devices

et al. 2023

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Hole-transport layers (HTLs) and hole-injection layers (HIL) are an integral part of optoelectronic devices such as organic photovoltaic cells (OPVs) and organic light-emitting diodes (OLEDs). A class of materials commonly used as HTLs are metal oxides because they have high transparency and stability. These metal oxides are, however, often made using techniques that are not conducive to large-scale fabrication, a challenge that must be resolved for the widespread adoption of these devices. In this work, we demonstrate the use of a room-temperature, ambient photochemical deposition route to form vanadium oxide films. We show, using a combination of X-ray absorption and X-ray photoemission spectroscopies, that the VO x film consists of V 2 O 5 but with a significant amount of V 4+ present. These films are initially created amorphous and become nanocrystalline after annealing in air at a temperature of 250 °C. After incorporating these VO x thin films as HTLs in both OPV and OLED devices, we surprisingly find this increase in crystallinity does not translate to improvement in device performance. All devices perform similarly to�or better than�control devices using PEDOT:PSS as an HTL. We furthermore demonstrate that these films are not affected by the operation of these devices and that the technique can be employed in combination with slot-die coating printing techniques. This work provides an easily upscaled, low-temperature method for depositing metal-oxide HTL layers.

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Section: Resultsmentioning

confidence: 99%

Room-Temperature Photodeposited Amorphous VO_x Hole-Transport Layers for Organic Devices

et al. 2023

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A step-wise bilayered hole-injection layer composed of vanadium oxide and PEDOT:PSS for simultaneously enhancing efficiency and stability of organic light-emitting diodes

Zhang,

Zhu,

et al. 2024

Optical Materials

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Research on Flexible Transparent Conductive Electrodes Based on Ultra-Thin Ag in the Form of Grain Boundary with IZO Layer

Park

2024

Korean J. Met. Mater.

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In this paper, we investigated a transparent conductive electrode (TCE) that satisfies electrical, optical, and mechanical properties, formed by depositing ultra-thin Ag metal in the form of a random grain boundary with an indium zinc oxide (IZO) layer on a PET substrate. Commonly used ITO electrodes are brittle and difficult to apply to flexible devices. In contrast, IZO-based electrodes are mechanically flexible and can be used as flexible TCE, and have high electrical and optical properties. A 90 nm thick IZO electrode has a transmittance of 90.2% at a wavelength of 460 nm and a sheet resistance of 29.5 ohm/sq. In particular, Ag metal was deposited in the form of an atypical metal island using an RF magnetron sputtering system. At 3 nm there were few metal clusters in the form of islands, and many void channels were formed, resulting in high sheet resistance as well as a decrease in optical transmittance. However, about 5 nm thickness, the number of void channels decreased and the optical path changed, improving the electrical and optical properties. Results showed that the sheet resistance was reduced to 19.8 ohm/sq, and the transmittance was also increased to 91.1%. The mechanical properties were also found to be the same for conventional IZO and Ag/IZO TCE.

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A strategy of synergistic optimization: gold and lithium co-doped vanadium oxide as a hole-injection layer for high-performance OLEDs

Abstract: The hole-injection layer (HIL) plays a critical role in efficiency and stability of organic light-emitting diodes (OLEDs). However, inorganic HIL materials, such as transition metal oxides (TMOs), usually suffer the...

Cited by 3 publications

References 53 publications

Room-Temperature Photodeposited Amorphous VO_x Hole-Transport Layers for Organic Devices

Room-Temperature Photodeposited Amorphous VO_x Hole-Transport Layers for Organic Devices

A step-wise bilayered hole-injection layer composed of vanadium oxide and PEDOT:PSS for simultaneously enhancing efficiency and stability of organic light-emitting diodes

Research on Flexible Transparent Conductive Electrodes Based on Ultra-Thin Ag in the Form of Grain Boundary with IZO Layer

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A strategy of synergistic optimization: gold and lithium co-doped vanadium oxide as a hole-injection layer for high-performance OLEDs

Abstract: The hole-injection layer (HIL) plays a critical role in efficiency and stability of organic light-emitting diodes (OLEDs). However, inorganic HIL materials, such as transition metal oxides (TMOs), usually suffer the...

Cited by 3 publications

References 53 publications

Room-Temperature Photodeposited Amorphous VOx Hole-Transport Layers for Organic Devices

Room-Temperature Photodeposited Amorphous VOx Hole-Transport Layers for Organic Devices

A step-wise bilayered hole-injection layer composed of vanadium oxide and PEDOT:PSS for simultaneously enhancing efficiency and stability of organic light-emitting diodes

Research on Flexible Transparent Conductive Electrodes Based on Ultra-Thin Ag in the Form of Grain Boundary with IZO Layer

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Product

Resources

About

Room-Temperature Photodeposited Amorphous VO_x Hole-Transport Layers for Organic Devices

Room-Temperature Photodeposited Amorphous VO_x Hole-Transport Layers for Organic Devices