A Strategic Two-Stage Low-Temperature Thermal Processing Leading to Fully Dense and Fine-Grained Doped-ZnO Varistors

Durán, P.; Capel, F.; Tartaj, J.; Moure, C.

doi:10.1002/1521-4095(20020116)14:2<137::aid-adma137>3.0.co;2-7

Cited by 148 publications

(88 citation statements)

References 16 publications

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“…The finest grained varistor ceramics described in the literature contain grains in the range of 250-500 nm in diameter. [10,11] The aim of the present study is therefore to explore a new process allowing the realization of nanostructured varistors.…”

Section: Introductionsupporting

confidence: 86%

“…4d), metallic bismuth turned into gBi 2 O 3 or Bi 38 ZnO 58 . The main bismuth-rich phase usually found in varistor ceramics made by classical sintering is the b-Bi 2 O 3 phase, [10,16] but the presence of d, g, and a phases are also reported in some studies, depending on the additives and thermal processing conditions. [17][18][19][20] At a temperature of 650 8C, bismuth oxide and zinc oxide do not form the eutectic so that no additional sintering and no grain growth occur.…”

Section: Sinteringmentioning

confidence: 99%

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Size Effect on Properties of Varistors Made From Zinc Oxide Nanoparticles Through Low Temperature Spark Plasma Sintering

Macary

Kahn

Estournès

et al. 2009

Adv Funct Materials

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Conditions for the elaboration of nanostructured varistors by spark plasma sintering (SPS) are investigated, using 8‐nm zinc oxide nanoparticles synthesized following an organometallic approach. A binary system constituted of zinc oxide and bismuth oxide nanoparticles is used for this purpose. It is synthesized at room temperature in an organic solution through the hydrolysis of dicyclohexylzinc and bismuth acetate precursors. Sintering of this material is performed by SPS at various temperatures and dwell times. The determination of the microstructure and the chemical composition of the as‐prepared ceramics are based on scanning electron microscopy and X‐ray diffraction analysis. The nonlinear electrical characteristics are evidenced by current–voltage measurements. The breakdown voltage of these nanostructured varistors strongly depends on grain sizes. The results show that nanostructured varistors are obtained by SPS at sintering temperatures ranging from 550 to 600 °C.

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Section: Introductionsupporting

confidence: 86%

Section: Sinteringmentioning

confidence: 99%

Size Effect on Properties of Varistors Made From Zinc Oxide Nanoparticles Through Low Temperature Spark Plasma Sintering

Macary

Kahn

Estournès

et al. 2009

Adv Funct Materials

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“…9c. V c decreases because Ag decreases the number of ZnO grain boundaries and metal Ag particles may lead to an increase of leakage current [76,77]. Organic NWs have the following advantages such as easy to design molecules to tune electronic properties and realize largescale synthesis at low cost, well flexibility and light weights [78,79].…”

Section: Science China Materialsmentioning

confidence: 99%

Electrospun nanowire arrays for electronics and optoelectronics

2016

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Electrospinning is a cheap and stable technique that allows the fabrication of continuous and uniform fibers, either organic or inorganic, with diameters ranging from tens of nanometers to several micrometers for mass production [5−7]. Moreover, highly ordered aligned nanowire array (NWA) can also be easily achieved on various substrates based on modified electrospinning, which is greatly beneficial to the following applications of NWs in various fields shown in Fig. 1. In this review, we provide a concise retrospection on the assembling methods and primarily highlight the electrospinning method and corresponding applications of NWA including electrodes, field effect transistors (FET), piezoelectric sensor, gas sensor, and photodetectors. We also give comments and prospection in the ABSTRACT Alignment of NWs (NWs) is the core issue for integrating NWs into nanodevices in future. This review made a concise retrospect on reported assembling methods and mainly emphasized on the electrospinning method and its developments, as well as the following applications of the aligned nanowire array (NWA) in electronics and optoelectronics. First, we classified reported assembling methods into three categories: "grow then place", "place then grow" and "grow and place" (electrospinning method). Then, we focused on the electrospinning method and its modified method including field assisted method, rotating collector assisted method and near-field assisted methods, as well as their merits and defects, respectively. Next, we illustrated the applications of the NWs arrays fabricated by electrospinning in field effect transistors (FET), gas sensors, piezoelectric sensors and photodetectors. Finally, we made a short conclusion and prospection on electrospinning method. As an easy and cheap nanowire fabrication and alignment method, electrospinning has a bright future in one-dimensional materials based electronics and optoelectronics.

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“…15,16 Analysis of sintering data requires a sound physical model. Although theoretical models usually use idealized geometric assumptions which may not hold in real materials, 8,10,11,[17][18][19][20][21][22][23][24][25][26] a general dimensional argument originated by Herring 27,28 states that the normalized rate of densification, via grain boundary diffusion, can be expressed as…”

mentioning

confidence: 99%

Two‐Step Sintering of Ceramics with Constant Grain‐Size, I. Y₂O₃

Wang

Chen

2005

Journal of the American Ceramic Society

341

207

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Isothermal and constant-grain-size sintering have been carried out to full density in Y 2 O 3 with and without dopants, at as low as 40% of the homologous temperature. The normalized densification rate follows Herring's scaling law with a universal geometric factor that depends only on density. The frozen grain structure, however, prevents pore relocation commonly assumed in the conventional sintering models, which fail to describe our data. Suppression of grain growth but not densification is consistent with a grain boundary network pinned by triple-point junctions, which have a higher activation energy for migration than grain boundaries. Long transients in sintering and grain growth have provided further evidence of relaxation and threshold processes at the grain boundary/triple point. Isothermal and constant-grain-size sintering have been carried out to full density in Y 2 O 3 with and without dopants, at as low as 40% of the homologous temperature. The normalized densification rate follows Herring's scaling law with a universal geometric factor that depends only on density. The frozen grain structure, however, prevents pore relocation commonly assumed in the conventional sintering models, which fail to describe our data. Suppression of grain growth but not densification is consistent with a grain boundary network pinned by triple-point junctions, which have a higher activation energy for migration than grain boundaries. Long transients in sintering and grain growth have provided further evidence of relaxation and threshold processes at the grain boundary/triple point.

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A Strategic Two-Stage Low-Temperature Thermal Processing Leading to Fully Dense and Fine-Grained Doped-ZnO Varistors

Cited by 148 publications

References 16 publications

Size Effect on Properties of Varistors Made From Zinc Oxide Nanoparticles Through Low Temperature Spark Plasma Sintering

Size Effect on Properties of Varistors Made From Zinc Oxide Nanoparticles Through Low Temperature Spark Plasma Sintering

Electrospun nanowire arrays for electronics and optoelectronics

Two‐Step Sintering of Ceramics with Constant Grain‐Size, I. Y₂O₃

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A Strategic Two-Stage Low-Temperature Thermal Processing Leading to Fully Dense and Fine-Grained Doped-ZnO Varistors

Cited by 148 publications

References 16 publications

Size Effect on Properties of Varistors Made From Zinc Oxide Nanoparticles Through Low Temperature Spark Plasma Sintering

Size Effect on Properties of Varistors Made From Zinc Oxide Nanoparticles Through Low Temperature Spark Plasma Sintering

Electrospun nanowire arrays for electronics and optoelectronics

Two‐Step Sintering of Ceramics with Constant Grain‐Size, I. Y2O3

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Two‐Step Sintering of Ceramics with Constant Grain‐Size, I. Y₂O₃