A strategic review on gallium oxide based power electronics: Recent progress and future prospects

Shivani, .; Kaur, Damanpreet; Ghosh, Anupam; Kumar, Mukesh

doi:10.1016/j.mtcomm.2022.104244

Cited by 34 publications

(22 citation statements)

References 354 publications

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“…Various versions of epitaxial growth on native β-Ga 2 O 3 substrates have been successfully developed, which is an advancement that allows for the growth of epitaxial films and heterostructures that are of very good quality and are suitable for the fabrication of power devices and photodetectors with promising performance. The state of growth of bulk and epitaxial β-Ga 2 O 3 films and structures, the fabrication of various devices, and experimental and theoretical studies on the defects and impurities that exist in β-Ga 2 O 3 have been described in several recent books and reviews [ 2 , 6 , 7 , 8 , 9 ]. To summarize this progress, β-Ga 2 O 3 devices are currently characterized by very high operating voltages that are rapidly approaching the theoretically predicted limits based on the estimated electric breakdown field of 8 MV/cm.…”

Section: Introductionmentioning

confidence: 99%

“…They also exhibit good switching speeds due to the high saturation velocity of electrons. Photodetectors show excellent photosensitivity in the far-UV-C spectral range, with a high rejection ratio for photosensitivity in the visible and near-UV range; this is owing to the very large bandgap and the reasonably low density of defects, which create centers with deep levels in the gap [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ]. Both n-type bulk crystals and epi-layers can be controllably grown with doping over a wide range of concentrations, as well as via semi-insulating, by incorporating Fe, Mg or N acceptors [ 2 ].…”

Section: Introductionmentioning

confidence: 99%

“…Bulk crystals and epi-structures of β-Ga 2 O 3 are commercially available (see e.g., [ 11 ]). Prototype devices of various types with characteristics that exceed those based on more mature wide-bandgap materials have been demonstrated by many research groups and are approaching the stage at which they will become commercially available [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ]. The remaining problems in this materials system are related to the absence of defects and impurities that are suitable for viable p-type doping, the low thermal conductivity of β-Ga 2 O 3 , considerable anisotropy related to low levels of lattice symmetry, and the relatively low electron mobility [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

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Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

et al. 2023

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In this study, the structural and electrical properties of orthorhombic κ-Ga2O3 films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga2O3/AlN/Si structures, the formation of two-dimensional hole layers in the Ga2O3 was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of κ-Ga2O3 and AlN. Structural studies indicated that in the thickest κ-Ga2O3/GaN/sapphire layer used, the formation of rotational nanodomains was suppressed. For thick (23 μm and 86 μm) κ-Ga2O3 films grown on GaN/sapphire, the good rectifying characteristics of Ni Schottky diodes were observed. In addition, deep trap spectra and electron beam-induced current measurements were performed for the first time in this polytype. These experiments show that the uppermost 2 µm layer of the grown films contains a high density of rather deep electron traps near Ec − 0.3 eV and Ec − 0.7 eV, whose presence results in the relatively high series resistance of the structures. The diffusion length of the excess charge carriers was measured for the first time in κ-Ga2O3. The film with the greatest thickness of 86 μm was irradiated with protons and the carrier removal rate was about 10 cm−1, which is considerably lower than that for β-Ga2O3.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

et al. 2023

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“…In recent years, β-Ga 2 O 3 has been attracting more and more attention in the field of power electronics due to its ultra-wide bandgap of 4.6-4.9 eV, estimated critical field strength of 8 MV cm −1 , high Baliga's figure-of-merit (BFOM) of more than 3000, and its own excellent thermal and chemical stability compared to other crystalline phases. [1][2][3][4] In addition, Large-size high quality β-Ga 2 O 3 single-crystal bulks can be produced by mature meltgrowth methods at relatively low cost, which is not applicable to SiC and GaN. 1,2,4,5 All these facts suggest the extraordinary potential of β-Ga 2 O 3 .…”

mentioning

confidence: 99%

Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp

Huang,

Chen,

et al. 2023

ECS J. Solid State Sci. Technol.

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A novel vertical ﬁn-based NiO/β-Ga2O3 heterojunction ﬁeld-effect transistor (Fin-HJFET) is proposed and studied by TCAD. Theoretically high conduction band offset ( ) enables Ga2O3 Fin-HJFET to produce an electron confinement effect at a certain gate bias voltage. According to the simulation results, this effect means Ga2O3 Fin-HJFET can not only form surface-conducting fin channels that are not available in conventional ﬁn-based junction ﬁeld-effect transistor (Fin-JFET), but also have a stronger electron accumulation capability than Ga2O3 vertical FinFET due to the deep potential well, which leads to a lower specific on-resistance ( ). In addition, Ga2O3 Fin-HJFET inherits the advantages of Ga2O3 FinFET as a vertical normally-off device and has a higher breakdown voltage compared to FinFET without field plates due to the protection of the highly doped NiO layer. Particularly, Fin-HJFET with different heterojunction band alignments are also considered and discussed. Finally, the parameter influence and future optimization space of this highly promising device are explored, providing guidance for actual device fabrication and future device improvement.

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“…The lion's share of research has been done so far for the β-polymorph due to its thermodynamic stability. [1][2][3][4][5] However, in recent years there has been great interest in the α-Ga 2 O 3 . There are several reasons for this.…”

mentioning

confidence: 99%

Direct Observation of the Stretching of the Photoinduced Current Relaxation in α-Ga₂O₃ Schottky Diodes

Schemerov,

Polyakov,

Vasilev

et al. 2023

ECS J. Solid State Sci. Technol.

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Relaxation of photoinduced current in α-Ga2O3-based Schottky diodes was measured. Such Schottky diodes were fabricated using α-Ga2O3 films grown by Halide Vapor Phase Epitaxy (HVPE) on basal plane sapphire. Their photosensitivity in UV-C region was very high and several orders of magnitude higher than for visible light. The photoinduced current rise and decay times are found to be quite long, which is attributed to the hole capture by deep acceptors and to the effects of potential fluctuations. Due to these problems the photoinduced current relaxation process consists of several steps and takes more than hundreds of seconds. The characteristic relaxation times were calculated using the logarithmic differential analysis that demonstrated that the build-up and decay processes can be accurately described by stretched exponents with different broadening factors β. It was shown that additional illumination by long-wave light can help to observe the slowing of the relaxation speed. The temperature activation energies for photoinduced current decay and rise times are 0.37 ± 0.03 eV and 0.06 ± 0.005 eV respectively.

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A strategic review on gallium oxide based power electronics: Recent progress and future prospects

Cited by 34 publications

References 354 publications

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp

Direct Observation of the Stretching of the Photoinduced Current Relaxation in α-Ga₂O₃ Schottky Diodes

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A strategic review on gallium oxide based power electronics: Recent progress and future prospects

Cited by 34 publications

References 354 publications

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

Novel Vertical Fin-Based NiO/β-Ga2O3 Heterojunction Field-Effect Transistor with a Low Ron,sp

Direct Observation of the Stretching of the Photoinduced Current Relaxation in α-Ga2O3 Schottky Diodes

Contact Info

Product

Resources

About

Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp

Direct Observation of the Stretching of the Photoinduced Current Relaxation in α-Ga₂O₃ Schottky Diodes