A stochastic model of gamma-ray induced oxide charge distribution and threshold voltage shift of MOS transistors

Abstract

A stochastic model of gamma-ray radiation effects on the density of the induced charge in silicon dioxide films of MOS transistors is presented in this paper. It is assumed that both radiation induced charge generation and trapped charge recombination are stochastic processes. For estimating gamma-ray induced charges spatially distributed in silicon dioxide films, a procedure similar to the Monte Carlo method was used. The proposed model implemented in the programming language MATHEMATICA enables us, for the first time, to show the gamma-ray induced charge distribution as a function of gamma-ray doses. Using the developed model, we have also calculated the corresponding threshold voltage shifts of MOS transistors. These results were compared with the experimentally determined threshold voltage shift of MOS transistors with different voltages applied during irradiation vs. gamma radiation doses. Satisfactory agreements were obtained

A Multicriteria Decision Aid-Based Model for Measuring the Efficiency of Business-Friendly Cities

“…It is important to remark on the possible uncertainty, imprecision, and subjectivity of input data determination, which is the case in the considered BFC process, and implies the necessity of adding methodologies, which decreases the impact of this deficiency on the results obtained with the proposed methodology. This is, for example, the case with the methodologies based on the fuzzy, interval rough set and interval neutrosophic rough set theory, which are considered in the papers [114][115][116][117][118][119][120]. This could be the subject of future work of the authors.…”

The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

“…This is because the ex ist ing ox ide and in ter face elec tron states al low the ex ter nal elec tric field ap plied (or gamma-irra di a tion in spe cial de vice ap pli ca tions) to change the fea tures of SiO 2 and SiO 2 -Si in ter face in flu enc ing neg a tively on the op er a tion ef fi ciency of the de vices. Nu mer ous meth ods were used in the study of SiO 2 and SiO 2 -Si in ter face na ture and their char ac ter iza tion [1][2][3][4]. Any way, it is pos si ble to roughly di vide them into the meth ods im ple mented on the MOS ca pac i tor struc ture and the meth ods that are im ple mented on the com plex MOS elec tron de vices.…”