A Stealthy Attack Against Tor Guard Selection

Li, Quangang; Liu, Peipeng; Qin, Zhiguang

doi:10.14257/ijsia.2015.9.11.36

Cited by 14 publications

(17 citation statements)

References 16 publications

(16 reference statements)

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“…Alternatively, the glide of the top or bottom chalcogen atoms in the 55|8 MTBs can turn them into 4|4E type. We note that if the chalcogen glide takes place only at the top or bottom chalcogen plane within the whole triangle, this leads to formation of the octahedral (1T) polymorph of the TMD material [50,51] instead of inverted domain.…”

Section: Progress Reportmentioning

confidence: 95%

Engineering the Electronic Properties of Two‐Dimensional Transition Metal Dichalcogenides by Introducing Mirror Twin Boundaries

Komsa

Krasheninnikov

2017

Adv Elect Materials

109

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Grain boundaries in 2D materials can have marked influence on the material properties. The effects can be not only detrimental, but also beneficial in transition metal dichalcogenides (TMDs), so that controlling the density and type of the boundaries in these systems should be important for engineering their properties. However, this is often possibly only during the growth stage. Molybdenum and tungsten dichalcogenides feature a particular set of 60° mirror twin boundaries, which are reported to occur upon merging of the growing flakes, to appear during growth to accommodate for the nonstoichiometry of the sample, or to be produced a posteriori by electron irradiation or thermal annealing. Furthermore, different preparation conditions lead to different atomic structure of the boundary, which consequently exhibit different electronic properties. This has obviously garnered interest for the ability to control grain boundary types and densities. In this progress report, the recent experimental and theoretical work related to the characterization of mirror twin boundaries is reviewed. A consistent set of formation energies for the mirror twin boundaries is provided, which then allows a coherent picture on the formation mechanisms under different conditions to be drawn. Finally, the electronic structure of these boundaries is analyzed and their potential applications are discussed.

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Section: Progress Reportmentioning

confidence: 95%

Engineering the Electronic Properties of Two‐Dimensional Transition Metal Dichalcogenides by Introducing Mirror Twin Boundaries

Komsa

Krasheninnikov

2017

Adv Elect Materials

109

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“…9 It has been recently demonstrated that the reversible transition from 2H to 1 T phase can be achieved in monolayer MoS 2 by annealing, 10 electric doping, 11,12 applying strain 13 or electron-beam irradiating. 14 More importantly, a mixed phase (2H and 1T) structure with the abrupt phase interface and matched lattice has been demonstrated experimentally. 15 This kind of bi-phase hybrid systems with semiconducting and metallic regions paved the way to design the new generation 2D photoelectric devices based on the in-plane metal/semiconductor heterostructures.…”

Section: Introductionmentioning

confidence: 92%

“…16,17 Compared with the comprehensive studies on the fabrications [18][19][20][21] and applications 22,23 of graphene/h-BN heterostructures, few reports focused on the in-plane 1T/2H MoS2 hybrid systems. [14][15][16] By using lithium based chemical exfoliation method, Eda et al 15 firstly synthetized a single layer of exfoliated MoS 2 consisting of both 2H and 1T phases then form chemically homogeneous atomic and electronic heterostructures with potential for novel molecular functionalities. The atomic phase transition mechanism for 2H to 1T in mono-layer MoS 2 have been explored with transmission electron microscopy, in which the controllable area of 1T phase was achieved with essential intermediate phases as the precursor phase.…”

Section: Introductionmentioning

confidence: 99%

Structural, mechanical and electronic properties of in-plane 1T/2H phase interface of MoS2 heterostructures

et al. 2015

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Two-dimensional (2D) molybdenum disulfide (MoS2) phase hybrid system composed by 2H and 1T phase is a natural metal/semiconductor heterostructures and promised a wide range of potential applications. Here, we report the first principle investigations on the structural, mechanical and electronic properties of hybrid system with armchair (AC) and zigzag (ZZ) interfaces. The ZZ type 1T/2H interface are more energy favorable than AC type interface with 3.39 eV/nm. Similar with that of bulked 1T MoS2, the intrinsic strengths of the heterostructures are lower than that of the bulk 2H, especially for that with ZZ interface. Analysis of density of states shows that the electronic properties gradually transmitted from the metallic 1T phase to the semiconducting 2H phase for the structural abrupt interface. The present theoretical results constitute a useful picture for the 2D electronic devices using current MoS2 1T/2H heterostructures and provide vital insights into the other 2D hybrid materials.

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“…Furthermore, the dynamic process of the transformation between 2H and 1T phases involving intralayer atomic plane gliding has been experimentally proven by View Article Online using an aberration-corrected STEM. 77 The dynamic process of the atomic motions was visualized in the single-layered MoS 2 . In addition to the glide of the sulfur plane, the phase transformation in the MoS 2 sheet involves atomic displacements (Fig.…”

Section: Crystal Propertiesmentioning

confidence: 99%

Two-dimensional layered MoS₂: rational design, properties and electrochemical applications

Zhang

Liu

et al. 2016

Energy Environ. Sci.

554

331

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The layered molybdenum chalcogenide MoS 2 has attracted wide attention due to its potential electrochemical applications. Based on its unique physical and chemical properties, numerous advances have shown that nanostructured MoS 2 , with the advantages of low cost and outstanding properties, is a promising candidate for environmentally benign energy conversion and storage (ECS) devices.Nowadays, in order to lessen the reliance on fossil fuels, the production of hydrogen from water splitting has become an important issue. Hence, developing catalysts composed of earth-abundant elements that possess activities comparable to those of noble metals is of great urgency. According to DFT calculations in terms of HER free-energy diagrams, MoS 2 could be used as an effective substitute for noble metals. Meanwhile, MoS 2 with various structures has also been applied in the field of energy storage, including batteries and supercapacitors. Additionally, due to their layer-dependent electrical properties, MoS 2 -based electrochemical devices have been applied as sensors for a variety of chemicals.In this review, we summarize recent advances in the development of MoS 2 with high-performance in various electrochemical domains, and recent progress in discovering the mechanisms underlying the enhanced activity. Moreover, we summarize the critical obstacles facing MoS 2 , and discuss strategies for further improving its activity. Lastly, we offer some suggestions on the pathways toward achieving high performance competitive with noble metal counterparts, and perspectives on practical applications of MoS 2 in the future. Broader contextThe development of inexhaustible and clean energy technologies has far-reaching benefits for our society. Owing to its high anisotropy and unique crystal structure, the attractive properties of 2D molybdenum disulfide (MoS 2 ) can be utilized in a variety of energy conversion and storage (ECS) applications. Therefore, understanding how these properties can be tuned and the tunable properties can be utilized becomes increasingly important. In this review, we first summarize recent synthetic strategies toward preparation of MoS 2 with different structures, and its role in several important renewable energy technologies. We then discuss the relationship between the tuned properties and the performance of MoS 2 in different applications, emerging trends during their development, and challenges facing them, offering our perspectives on how to effectively advance the development of MoS 2 -based devices.

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A Stealthy Attack Against Tor Guard Selection

Abstract: Abstract

Cited by 14 publications

References 16 publications

Engineering the Electronic Properties of Two‐Dimensional Transition Metal Dichalcogenides by Introducing Mirror Twin Boundaries

Engineering the Electronic Properties of Two‐Dimensional Transition Metal Dichalcogenides by Introducing Mirror Twin Boundaries

Structural, mechanical and electronic properties of in-plane 1T/2H phase interface of MoS2 heterostructures

Two-dimensional layered MoS₂: rational design, properties and electrochemical applications

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A Stealthy Attack Against Tor Guard Selection

Abstract: Abstract

Cited by 14 publications

References 16 publications

Engineering the Electronic Properties of Two‐Dimensional Transition Metal Dichalcogenides by Introducing Mirror Twin Boundaries

Engineering the Electronic Properties of Two‐Dimensional Transition Metal Dichalcogenides by Introducing Mirror Twin Boundaries

Structural, mechanical and electronic properties of in-plane 1T/2H phase interface of MoS2 heterostructures

Two-dimensional layered MoS2: rational design, properties and electrochemical applications

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Two-dimensional layered MoS₂: rational design, properties and electrochemical applications