A stacked memory device on logic 3D technology for ultra-high-density data storage

Abstract

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.

Tuning coercive force by adjusting electric potential in solution processed Co/Pt(111) and the mechanism involved

“…To avoid contamination by oxygen, the solutions were purged with high purity argon for 1 hr before the experiments. The electrochemical cell used for the CV and MOKE measurements was developed and built in our laboratory3456. Pt and Ag wires were used as the counter electrode and the reference electrode, respectively.…”

“…Pt and Ag wires were used as the counter electrode and the reference electrode, respectively. The electricity of the standard three-electrode setup was controlled by a potentiostat that was constructed in Bonn34566061. The CV of the Pt(111) electrode in a pure supporting electrolyte containing HCl and KCl, and with a CoCl 2 additive are shown in the Supplementary Information 1.…”

“…The parallel potential channel is designed to switch the write and read process by changing the supplied electric potential for each pillar that can avoid the exchange coupling between pillars. In these design, the potential controllable magnetic pillars can be structured as three-dimensional stacking like many electronic devices34 which improve the amount of pack clusters and enhance the areal density in a disc. Combining the solution process and controlling the electric potential for the operation of a magnetic device is a viable technique for achieving a highly controlled efficiency and a lower power consumption with a reduced cost of production.…”

Electrical memory devices based on inorganic/organic nanocomposites

“…[41][42][43] Therefore, a multilayer structure based on hybrid nanocomposites may offer a promising approach to future ultra-high-density memories. Recently, Song et al 43 developed a hybrid resistive memory device with a three-dimensional stacked 8 Â 8 cross-bar array by using a composite of PI and 6-phenyl-C61 butyric acid methyl ester.…”

Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy

“…The emergence of the new 3D electron device technologies (e.g. 3D transistors FinFET 25 and 3D NAND memories 26 ) and of new 3D functional nanomaterials 27,28,29 is prompting for a resolution of the above mentioned challenge. 30 The major issue posed by non-planar heterogeneous systems is that the measured microwave signal shows contributions due to both changes in the sample topography and changes in the local electric permittivity properties, whose disentanglement is rather complex.…”