A spin polarizer made of a diluted magnetic semiconductor quantum well

Transport properties of a spin polarizer for electrons

“…To obtain the tight-binding amplitude a s j of an electron in the complete system we solve a matricial finite system for the scattering region (Fig. 1) and make use of a decimation procedure [12,17,18] which couples exactly the amplitudes at the collector to the ones at the emitter:…”

“…We obtain a self-consistent solution for charge distribution and potential energy profile in which an onedimensional Green function is used for obtaining the solution of Poisson equation [12]. The charge distribution in the scattering region is mainly composed of extrinsic holes originated by the p-doping in the DMS.…”

“…In previous works we focused in the spin polarized transport of holes [10][11][12], however the spin relaxation time in quantum wells is approximately 100 ns for electrons and 150 ps for holes at T % 10 K [2,13]. Our device is a heterostructure whose configuration is 40Å À Ga 0:58 Al 0:42 As=93Å À Ga 0:95 Mn 0:05 As= 40ÅÀ Ga 0:58 Al 0:42 As, it is depicted in Fig.…”

Local structures around Mn atoms in MnxSi1-xthin films probed by fluorescence XAFS

“…Most activities are focused on the Mn-doped III-V or II-VI DMS materials, for which high quality epitaxial films with room temperature ferromagnetism (RT-FM) have been grown [3]. However, since the theoretical prediction of high Curie temperature [4,5] in 5% Mn doped Si, more research interest has been devoted to the realization of ferromagnetism in Mn-doped group IV, owing to their potential compatibility with current Si-based processing technology [6].…”