A SPICE Large Signal Model for Resonant Tunneling Diode and Its Applications

Sharifi, Mohammad J.; Banadaki, Yasser Mohammadi; Maroulis, George; Simos, Theodore E.

doi:10.1063/1.3225461

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Rthemt and Its Modeling1

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2009

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“…This subcircuit includes two sections, a section for HEMT and another for RTD. HEMT is modeled by utilizing a level 3 SPICE model for FET [18] and by adjusting its parameters to match the chosen technology and with the experimental values reported in original paper [19], though RTD model has more details. As shown in Figure 5(a) the RTD conductance is modeled by using a GTABLE and its capacitance is modeled using GPOLY, ETABLE, R and C parts [19].…”

Section: Rthemt and Its Modelingmentioning

confidence: 99%

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Sharifi

Bahrepour

2009

VLSI Design

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A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

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Section: Rthemt and Its Modelingmentioning

confidence: 99%