A spectroscopic study of the piezoelectric effect in ZnSe/ZnCdSe single quantum wells grown on (2 1 1)B GaAs

Milnes, J.; Morhain, C.; Telfer, S. A.; Meridith, W.; Steele, Timothy A.; Prior, K. A.; Cavenett, B.C.

doi:10.1016/s0022-0248(98)80149-8

Cited by 7 publications

(2 citation statements)

References 6 publications

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“…Conventional solar cells are mainly composed of silicon (Si) and silicon‐based materials, GaAs, CdTe, CIGS (copper indium gallium selenide), and other materials, among which the highest PCE of GaAs solar cells is (37.4%). [ 154–159 ] Due to the extremely high production cost of gallium arsenide, which limits the application of gallium arsenide materials, polysilicon, and silicon‐based materials have relatively low production costs, so silicon and silicon‐based materials are the most widely used (≈24.4%). Research on solar cell materials with lower preparation cost and improved PCE aims to tackle the problem of energy depletion crisis and serious environmental pollution, and is one of the important ways to develop the photovoltaic field.…”

Section: Applicationsmentioning

confidence: 99%

Narrow Bandgap Inorganic Ferroelectric Thin Film Materials

Yang

2022

Adv Materials Inter

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(2 of 18)www.advmatinterfaces.de Figure 1. a) Spectra of solar radiance and UV-Vis-near IR absorption of BiFeO 3 and KBiFe 2 O 5 thin film materials and b) maximum theoretical efficiency versus bandgap. Reproduced with permission. [31] Copyright 2013, Springer Nature. c) The ultraviolet-visible-near-infrared (NIR) absorption spectrum hexagonal of and d) tauc plots of the ferrites (h-RFOs) with a narrow bandgap for the direct bandgap transition. Reproduced with permission. [32]

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Section: Applicationsmentioning

confidence: 99%

Narrow Bandgap Inorganic Ferroelectric Thin Film Materials

Yang

2022

Adv Materials Inter

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“…8 To illustrate this approach to determine h cr a set of Zn 0.85 Cd 0.15 Se quantum wells with thicknesses ranging from 10 to 40 nm were grown by molecular beam epitaxy ͑MBE͒. This approach is very convenient as it does not require the knowledge of any parameters of the investigated material and, furthermore, it can be extremely sensitive to the degree of relaxation of the layer.…”

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confidence: 99%