A spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals

Haeberle, Jörg; Brizzi, Simone; Gaspar, Diana; Barquinha, Pedro; Galazka, Zbigniew; Schulz, D.; Schmeißer, Dieter

doi:10.1088/2053-1591/3/10/106302

Cited by 10 publications

(14 citation statements)

References 35 publications

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“…Near the resonance energy an electron from the N 1s core level is excited into the partially occupied CB from hybridization of N 2p–Pb 6p–I 5p states. For more details about the resPES method and the data analysis, the authors recommend the reader to refer to their previous works …”

Section: Resultsmentioning

confidence: 99%

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite

Kot

Wojciechowski

Snaith

et al. 2018

Chemistry A European J

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Despite fast development of hybrid perovskite solar cells, there are many fundamental questions related to the perovskite film which remain open. For example, there are contradicting theoretical reports on the role of the organic methylammonium cation (CH NH ) in the methylammonium lead triiodide (CH NH PbI ) perovskite film. From one side it is reported that the organic cation does not contribute to electronic structure of the CH NH PbI film. From the other side, valence band maximum fluctuations, dependent on the CH NH rotation, have been theoretically predicted. The resonant X-ray photoelectron spectroscopy results reported here show experimental evidence of nitrogen contribution to the CH NH PbI electronic structure. Moreover, the observed strong resonances of nitrogen with the I 5s and the Pb 5d-6s levels indicate that the CH NH PbI valence band is extended up to ≈18 eV below the Fermi energy, and therefore one should also consider these shallow core levels while modeling its electronic structure.

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Section: Resultsmentioning

confidence: 99%

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite

Kot

Wojciechowski

Snaith

et al. 2018

Chemistry A European J

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“…Furthermore, not only do the TCO single crystals show these close relations, but the models presented here can be generalized also for amorphous films (magnetron sputtering in Ar/O 2 ) of the IGZO family 16,18,19,21 and also to several oxidic ALD films, [22][23][24][25]29 as all show similar behavior as they exhibit a high optical transparency and an n-type conductivity with high values of the mobility. In addition, these systems are easy to mix (IGZO family) while the properties remain stable.…”

Section: F Generalization For the Tco Family-an Outlookmentioning

confidence: 53%

“…38,39 Second, we have identified the existence of CT-bands, excitons, and polaronic defects in all of the investigated TCO systems, including single crystalline and thin film materials. [15][16][17][18][19]21,33 This indicates that the mechanisms for the defect formation must be very similar, indeed. Furthermore, we find several indications of the spectroscopic features discussed in this contribution.…”

Section: F Generalization For the Tco Family-an Outlookmentioning

confidence: 96%

“…This kind of defect therefore resembles an F-center. In terms of the intrinsic defects, this can be interpreted as an occupation/ filling of an excitonic defect level, 16 which appears as a shoulder next to the CT-band of the O2p states, and in this excitonic state, the Ga2p absorption contributes.…”

Section: A Atomic Model Of Intrinsic Defect Statesmentioning

confidence: 99%

“…In particular, in the resPES XAS data, the appearance of the PþS feature is commonly observed. [15][16][17][18][19]21 Its energy position in the XAS data actually can be used to determine the U pd value of the actual system independently from a detailed pDOS analysis.…”

Section: F Generalization For the Tco Family-an Outlookmentioning

confidence: 99%

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Intrinsic electronic defects and multiple-atom processes in the oxidic semiconductor Ga2O3

Schmeißer

Henkel

2018

Journal of Applied Physics

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We report on the electronic structure of gallium oxide (Ga2O3) single crystals as studied by resonant photoelectron spectroscopy (resPES). We identify intrinsic electronic defects that are formed by mixed-atomic valence states. We differentiate three coexisting defect states that differ in their electronic correlation energy and their spatial localization lengths. Their relative abundance is described by a fractional ionicity with covalent and ionic bonding contributions. For Ga2O3, our analyses of the resPES data enable us to derive two main aspects: first, experimental access is given to determine the ionicity based on the original concepts of Pauling and Phillips. Second, we report on multi-atomic energy loss processes in the Ga2p core level and X-ray absorption data. The two experimental findings can be explained consistently in the same context of mixed-atomic valence states and intrinsic electronic defects.

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Preparation, properties and electronic structure of SnO2

Henkel

Haeberle

Müller

et al. 2019

Single Crystals of Electronic Materials

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A spectroscopic comparison of IGZO thin films and the parent In₂O₃, Ga₂O₃, and ZnO single crystals

Cited by 10 publications

References 35 publications

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite

Intrinsic electronic defects and multiple-atom processes in the oxidic semiconductor Ga2O3

Preparation, properties and electronic structure of SnO2

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A spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals

Cited by 10 publications

References 35 publications

Evidence of Nitrogen Contribution to the Electronic Structure of the CH3NH3PbI3 Perovskite

Evidence of Nitrogen Contribution to the Electronic Structure of the CH3NH3PbI3 Perovskite

Intrinsic electronic defects and multiple-atom processes in the oxidic semiconductor Ga2O3

Preparation, properties and electronic structure of SnO2

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A spectroscopic comparison of IGZO thin films and the parent In₂O₃, Ga₂O₃, and ZnO single crystals

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite