A special silicon diaphragm pressure sensor with high output and high accuracy

Shimazoe, Michitaka; Matsuoka, Yoshitaka; Yasukawa, Akio; Tanabe, M.

doi:10.1016/0250-6874(81)80047-9

Cited by 51 publications

(23 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Improvements in sensing configuration design have made the performances better. Shimazoe et al [12] developed a sensor with a center boss on the diaphragm and an annular groove formed in the back surface of the diaphragm. Although the accuracy of the sensor was 0.17% FS, the variation of stress distribution was evident, thus the high precision placement of piezoresistors was demanded.…”

Section: Introductionmentioning

confidence: 99%

Achievement of a high-sensitive and high-overload sensor based on the bossed-diaphragm structure

Zhao

et al. 2014

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

View full text Add to dashboard Cite

The paper presents a piezoresistive absolute micropressure sensor for altimetry. This investigation includes the design, fabrication and testing of the sensor. An improved structure is studied through incorporating sensitive beams into the bosseddiaphragm structure. By analyzing the stress distribution of sensitive elements using finite element method (FEM), the configuration shows an enhanced sensitivity and a proper overload resistance. Equations about surface stress and deflection of the sensor are established by multivariate fittings based on ANSYS loop calculation results. Structure dimensions are optimized and determined by MATLAB. Silicon bulk micromachining technology is utilized to fabricate the sensor prototype, and the processing is discussed. The outputs under both static and dynamic conditions are tested. Experimental results demonstrate the sensor features a relatively high sensitivity of 11.655 V/V/Pa in the operating range of 500 Pa at room temperature and a proper overload resistance of 200 times overpressure to promise its survival under atmosphere. The favorable performances enable the sensor's application in measuring absolute micro pressure.

show abstract

Section: Introductionmentioning

confidence: 99%

Achievement of a high-sensitive and high-overload sensor based on the bossed-diaphragm structure

Zhao

et al. 2014

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

View full text Add to dashboard Cite

show abstract

“…Firstly, the method of partially stiffening the diaphragm is applied to lower the sensor non-linearity [13][14][15] to alleviate the balloon effect and lower the non-linearity. And the sensor accuracy was 0.17% FS with the range of 5-100 kPa.…”

Section: Introductionmentioning

confidence: 99%

A high sensitive pressure sensor with the novel bossed diaphragm combined with peninsula-island structure

Zhao

Jiang

et al. 2016

Sensors and Actuators A: Physical

View full text Add to dashboard Cite

“…Such piezoresistive mechanical sensor generally demonstrates a lower non-linearity (NL) than that of the capacitive pressure sensing devices under a small diaphragm deflection range [8]. However, in case of the low pressure sensing application, the degradation of NL is severe and it is commonly known as balloon effect [9]. Generally speaking, in order to obtain the required sensitivity and resolution under low pressure, the thinner diaphragm with a large defection is normally needed to satisfy measurement needs for the conventional flat diaphragm based piezoresistive pressure sensor.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowires embedded pressure sensor with annularly grooved diaphragm for sensitivity improvement

Zhang

Wang

Lee

et al. 2014

2014 IEEE Ninth International Conference on Intelligent Sensors, Sensor Networks and Information Processing (ISSNIP)

View full text Add to dashboard Cite

A NEMS piezoresistive pressure sensor with annular grooves on the circular diaphragm is presented here. Silicon Nanowires (SiNWs) are embedded as sensing elements at the edge of the diaphragm. This new diaphragm structure improves the device sensitivity by 2.5 times under a low pressure range of 0 ~ 120 mmHg with respect to our previously reported flat diaphragm pressure sensor. With the advantage of superior piezoresistive effect of SiNWs, this sensitivity improvement is even remarkable in contrast to other recently reported piezoresistive pressure sensing devices. Additionally, by leveraging the miniaturized sensing diaphragm (radius of 100 m), the sensor can be potentially used as implantable device for low pressure sensing applications.

show abstract

A special silicon diaphragm pressure sensor with high output and high accuracy

Cited by 51 publications

References 5 publications

Achievement of a high-sensitive and high-overload sensor based on the bossed-diaphragm structure

Achievement of a high-sensitive and high-overload sensor based on the bossed-diaphragm structure

A high sensitive pressure sensor with the novel bossed diaphragm combined with peninsula-island structure

Silicon Nanowires embedded pressure sensor with annularly grooved diaphragm for sensitivity improvement

Contact Info

Product

Resources

About