2022
DOI: 10.1038/s41586-022-05295-8
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A solution-processed n-type conducting polymer with ultrahigh conductivity

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Cited by 185 publications
(199 citation statements)
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References 57 publications
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“…6,[10][11][12][13] In 2021, Guo et al 14 reported a novel widely applicable transition metal-catalyzed n-doping methodology, which could offer new opportunities in n-doping organic TE materials. Recently, Tang et al 15 reported a solution-processed n-type conducting polymer with a breakthrough room-temperature conductivity reaching 2000 S cm −1 . To date, there are few conjugated polymers or small molecules with reported PFs over 100 mW m −1 K −2 owing to their relatively low electrical conductivities.…”
Section: Introductionmentioning
confidence: 99%
“…6,[10][11][12][13] In 2021, Guo et al 14 reported a novel widely applicable transition metal-catalyzed n-doping methodology, which could offer new opportunities in n-doping organic TE materials. Recently, Tang et al 15 reported a solution-processed n-type conducting polymer with a breakthrough room-temperature conductivity reaching 2000 S cm −1 . To date, there are few conjugated polymers or small molecules with reported PFs over 100 mW m −1 K −2 owing to their relatively low electrical conductivities.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, how to significantly improve the stability of doped π-CPs by the ion-exchange doping method should be emphasized. In addition, developing novel π-CPs without the need for extrinsic doping, such as self-doped π-conjugated polyelectrolytes 121 and in situ reductively n-doped poly(benzodifurandione) (PBFDO), 122 should be stressed due to their better stability under both ambient environment and higher temperatures.…”
Section: Strengthening Thermoelectric Performancementioning
confidence: 99%
“…Achieving a stable, highly conductive n-doped organic semiconductor has considerably been more difficult than for p-type systems, although very recently Tang et al have demonstrated a high performing n-type polymer, poly(benzodifurandione) (PBFDO), with r max > 2000 S cm À1 that could potentially close the gap between zT values of n-and p-type materials. 54 One of the challenges for n-type systems is the small number of available electron-withdrawing building blocks that also exhibit stable electron transport characteristics. 55 For stable transport in the doped state, the acceptor moiety in the organic semiconductor should have a sufficiently high electron affinity (EA), which translates to a low-lying energy level of the lowest unoccupied molecular orbital (LUMO), to avoid de-doping oxidation reactions in ambient air.…”
Section: B N-type Thermoelectric Materials For Tegsmentioning
confidence: 99%