A Solar-Blind $\beta$-Ga$_2$O$_3$ Nanowire Photodetector

Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga2O3 Nanowires for DUV Photodetector and Image Sensor Application

“…Both values are comparable to or even much higher than that of other β‐Ga 2 O 3 NWs‐ or NBs‐based DUV photodetectors in previous reports working at similar bias voltages (see Table 1 ). In addition, similar to the observations in other photodetectors, both R and EQE declined gradually with increasing light intensity (Figure c), which again manifests the presence of photocurrent recombination loss in the DUV photodetector. Under light illumination with an elevated intensity, the recombination of photocarriers will be accelerated due to increased concentration of charge carriers in the NWs …”

“…Benefiting from quantum confinement effect and remarkable surface/size effect, β‐Ga 2 O 3 nanostructures, in particular 1D β‐Ga 2 O 3 nanowires (NWs) or nanobelts (NBs), can exhibit attractive merits of better optical absorption, improved charge carrier transportation, and increased surface states to interact with surroundings, over their thin films' counterpart . Therefore, significant progresses have been made in the growth of high‐quality β‐Ga 2 O 3 NWs/NBs for DUV photodetectors' application . For example, Feng et al reported the synthesis of β‐Ga 2 O 3 NWs on Au‐coated Si substrate by directly evaporating Ga under controlled conditions .…”

Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

“…[24][25][26][27][28][29][30][31][32] In particular, beneting from quantum connement effect and remarkable surface/size effect, b-Ga 2 O 3 nanostructures, mainly 1D b-Ga 2 O 3 nanowires (NWs) nanobelts (NBs), can exhibit attractive merits of better optical absorption, improved charge carrier counterpart. [33][34][35][36][37][38] Therefore, signicant progress has been made in the growth of high-quality b-Ga 2 O 3 NWs/NBs for DUV photodetectors' application. Due to a large surface-to-volume ratio and a Debye length comparable to the small size, they demonstrate superior sensitivity to surface processes.…”

NOMAD dataset: Elastic stability of Ga2O3: Addressing the beta to alpha phase transition from first principles

“…The wide-gap transparent conducting oxide gallium oxide, Ga 2 O 3 , has gained a lot of interest in recent years as a potential candidate for a number of applications. Its tunable electrical and optical properties make it a promising material for gas sensors [1][2][3][4][5], field-effect transistors [6], and photodetectors [7][8][9][10]. The material exhibits polymorphism, i.e., depending on the experimental conditions, it can adopt one out of at least five different known structures (α, β, γ, δ, and ) [11].…”