A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage

Mukhopadhyay, Deepkishore; Dong, Jingyan; Pengwang, Eakkachai; Ferreira, Placid M.

doi:10.1016/j.sna.2008.04.018

Cited by 77 publications

(39 citation statements)

References 24 publications

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“…Alternatively, there has recently been increasing utilization of microelectromechanical systems (MEMS) technology to develop microscale nanopositioners. [10][11][12][13] Their implementation may provide significant benefits for existing systems, as well as facilitate the emergence of new applications. These miniaturized positioning devices potentially offer a number of significant advantages when compared with existing macroscale nanopositioners, including a greatly reduced volume, lower manufacturing costs, and simplified processes for bulk fabrication.…”

Section: Introductionmentioning

confidence: 99%

High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

Maroufi

Fowler

Bazaei

et al. 2015

Review of Scientific Instruments

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A 2-degree of freedom microelectromechanical systems nanopositioner designed for on-chip atomic force microscopy (AFM) is presented. The device is fabricated using a silicon-on-insulator-based process and is designed as a parallel kinematic mechanism. It contains a central scan table and two sets of electrostatic comb actuators along each orthogonal axis, which provides displacement ranges greater than ±10 μm. The first in-plane resonance modes are located at 1274 Hz and 1286 Hz for the X and Y axes, respectively. To measure lateral displacements of the stage, electrothermal position sensors are incorporated in the design. To facilitate high-speed scans, the highly resonant dynamics of the system are controlled using damping loops in conjunction with internal model controllers that enable accurate tracking of fast sinusoidal set-points. To cancel the effect of sensor drift on controlled displacements, washout controllers are used in the damping loops. The feedback controlled nanopositioner is successfully used to perform several AFM scans in contact mode via a Lissajous scan method with a large scan area of 20 μm × 20 μm. The maximum scan rate demonstrated is 1 kHz.

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Section: Introductionmentioning

confidence: 99%

High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

Maroufi

Fowler

Bazaei

et al. 2015

Review of Scientific Instruments

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“…Apart from this structure, the list of designs in the bibliography is enormous and different approaches can be found depending on the final application. Just considering the number of degrees of freedom, we can find devices with 1 degrees of freedom [11,12], with 2 degrees of freedom [15], with 3 degrees of freedom [10,14], with 6 degrees of freedom [4,16] or other combinations depending on specific applications.…”

Section: Introductionmentioning

confidence: 99%

Model-based mechanical and control design of a three-axis platform

Rodriguez-Fortun¹,

Orus²,

Alfonso³

et al. 2012

Mechatronics

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a b s t r a c tIn recent times, the interest from scientific and industrial community for the micrometric range has observed an important growth. The advances in microelectronics or the research on microbiology are just two examples of fields requiring technologies capable of assuring accurate displacements in that range. The present work focuses on the mechanical and control design of a micrometer range positioning and tracking platform using mathematical models. In a first phase, these models permit to identify the relationship between the dynamic performance of the structure and the mechanical properties of the elements that compose it. At the very beginning of the design, this information is used for the development of the different parts of the platform. Afterwards, once an initial design is finished and 3D models are available, the design is refined using finite element tools. In parallel to the mechanical design, the knowledge of the system embodied in the mathematical model is profited in the design of a control strategy for tracking and positioning. The proposed control strategy combines a linear controller based on differential flatness with a hysteresis compensator for correcting this nonlinear effect of the piezoelectric actuators. In the present paper, the mathematical derivation of the system model, its application to the design and validation of the platform and the final closed loop experimental evaluation are described.

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“…A twoDOFs planar stage with movable cantilever fabricated in silion on insulator (SOI) wafers is presented by Dong and Ferreira [9]. A parallel-kinematic three-DOFs planar manipulator fabricated in SOI wafers as well is reported by Mukhopadhyay et al [10]. Liu et al present a three-DOFs manipulator with two planar DOFs and one out-of-plane DOF [11].…”

mentioning

confidence: 99%

Design and Fabrication of a Planar Three-DOFs MEMS-Based Manipulator

Jong

Brouwer

Boer

et al. 2010

J. Microelectromech. Syst.

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Abstract-This paper presents the design, modeling, and fabrication of a planar three-degrees-of-freedom parallel kinematic manipulator, fabricated with a simple two-mask process in conventional highly doped single-crystalline silicon (SCS) wafers 100 . The manipulator's purpose is to provide accurate and stable positioning of a small sample (10 × 20 × 0.2 μm 3 ), e.g., within a transmission electron microscope. The manipulator design is based on the principles of exact constraint design, resulting in a high actuation-compliance combined with a relatively high suspension stiffness. A modal analysis shows that the fourth vibration mode frequency is at least a factor 11 higher than the first three actuation-related mode frequencies. The comb-drive actuators are modeled in combination with the shuttle suspensions gaining insight into the side and rotational pull-in stability conditions. The two-mask fabrication process enables high-aspect-ratio structures, combined with electrical trench insulation. Trench insulation allows structures in conventional wafers to be mechanically connected while being electrically insulated from each other. Device characterization shows high linearity of displacement wrt voltage squared over ±10 μm stroke in the x-and y-directions and ±2• rotation at a maximum of 50 V driving voltage. Out-of-plane displacement crosstalk due to in-plane actuation in resonance is measured to be less than 20 pm. The hysteresis in SCS, measured using white light interferometry, is shown to be extremely small.[ 2009-0254]Index Terms-Compliant mechanism, electrostatic actuators, exact constraint design, multidegrees of freedom, nanometer positioning, precision engineering, trench isolation.

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A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage

Cited by 77 publications

References 24 publications

High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

Model-based mechanical and control design of a three-axis platform

Design and Fabrication of a Planar Three-DOFs MEMS-Based Manipulator

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