A smart gate driver IC for GaN power transistors

Yu, Jingshu; Zhang, Wei Jia; Shorten, Andrew; Li, Rophina; Ng, Wai Tung

doi:10.1109/ispsd.2018.8393608

Cited by 18 publications

(14 citation statements)

References 4 publications

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“…In the power switch applications, one of the most important circuits is the gate driver. For different applications, the gate driver current varies significantly [24]. This leads us to examine the gate voltage effect on the dynamic R on degradation.…”

Section: Resultsmentioning

confidence: 99%

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Liu

et al. 2020

IEICE Electron. Express

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In this work, the thermal effect in the dynamic on-resistance (R on) degradation of normally-off p-GaN AlGaN/GaN HEMTs on SiC substrates has been analyzed using pulse-mode voltage stress. Compare to the significant degradation characteristics of GaN-on-Si HEMTs, a suppressed dynamic R on degradation is achieved in GaN-on-SiC due to higher thermal boundary conduction with less ionized acceptor-like buffer traps. Different electrical characteristics have been discussed to reveal the traps mechanisms related to thermal effect. Finally, two-dimension device simulation has been carried out to probe the physical insight into the thermal effect on the dynamic R on degradation.

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Section: Resultsmentioning

confidence: 99%

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Liu

et al. 2020

IEICE Electron. Express

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“…Precise size matching between the two power devices, the D-mode GaN power transistor and the Si n-MOSFET, is required to ensure proper and safe switching behavior of the cascode structure. 72 Furthermore, advanced packaging technologies are recommended due to the complex wire bonds and parasitic inductances and the physical form factor. [71][72][73] The gate driver designs for normally-OFF E-mode GaN power transistor have strict requirements.…”

Section: Gan Power Modulesmentioning

confidence: 99%

“…72 Furthermore, advanced packaging technologies are recommended due to the complex wire bonds and parasitic inductances and the physical form factor. [71][72][73] The gate driver designs for normally-OFF E-mode GaN power transistor have strict requirements. The first concern is the narrow margin between the rated and maximum allowable gate voltage.…”

Section: Gan Power Modulesmentioning

confidence: 99%

“…This scenario could shorten the lifespan of the GaN power transistor, or induce permanent damage to the device. 74 In addition, the ringing oscillations in GaN-based power converters could generate severe EMI with unwanted highfrequency harmonics. Electronic devices placed in close proximity and/or connected to the same power supplies could be victims of such interferences.…”

Section: Gan Power Modulesmentioning

confidence: 99%

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Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

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“…Various driving circuits for GaN HEMTs were explored in References [9][10][11][12][13][14][15][16][17][18]. Discussion and designs for GaN HEMT driving circuits were provided in References [19][20][21]. The designs of special undervoltage lockout circuit and low-inductance driving circuits were discussed in References [22] and [23], respectively.…”

Section: Gan Hemt Backgroundmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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A smart gate driver IC for GaN power transistors

Cited by 18 publications

References 4 publications

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Review of GaN HEMT Applications in Power Converters over 500 W

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