2012 IEEE Asia Pacific Conference on Circuits and Systems 2012
DOI: 10.1109/apccas.2012.6418997
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A small die area and high linearity 10-bit capacitive three-level DAC

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Cited by 3 publications
(3 citation statements)
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“…The INL is 0.61 LSB. INL is much more improved than the previous our work (2) . The power consumption of the TLDAC is 350 µW (including output buffers) at 50 MHz Bluetooth sampling frequency.…”
Section: Measurement Resultsmentioning
confidence: 64%
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“…The INL is 0.61 LSB. INL is much more improved than the previous our work (2) . The power consumption of the TLDAC is 350 µW (including output buffers) at 50 MHz Bluetooth sampling frequency.…”
Section: Measurement Resultsmentioning
confidence: 64%
“…The chip was implemented on a 0.18 µm CMOS process. In this design, to improve linearity higher than the previous work (2) , randomization of capacitor array layout is also chosen. The total active area is 0.081 mm 2 .…”
Section: Design and Implementationmentioning
confidence: 99%
“…C M1 to C M5 make up the main sub-DAC and C L1 to C L5 make up the low sub-DAC. The DAC array can theoretically be realized by both binary-weighted (BW) and unitary-weighted (UW) styles [41]. The ratio between the adjacent C i in BW DAC is two, whereas that in UW DAC is one.…”
Section: B Cbw Dacmentioning
confidence: 99%