A‐Site Rubidium Cation‐Incorporated CsPbI<sub>2</sub>Br All‐Inorganic Perovskite Solar Cells Exceeding 17% Efficiency

Patil, Jyoti V.; Mali, Sawanta S.; Hong, Chang Kook

doi:10.1002/solr.202000164

Cited by 116 publications

(114 citation statements)

References 49 publications

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“…[ 15 ] Although tremendous efforts have been devoted to improving the interface of CsPbI 2 Br solar cells, [ 16–18 ] the widely reported PCE of CsPbI 2 Br PSCs is still around 17%, which are inferior to that of their organic–inorganic counterparts. [ 19–22 ]…”

Section: Introductionmentioning

confidence: 99%

Dual Passivation Strategy for High Efficiency Inorganic CsPbI₂Br Solar Cells

Huang

Liu

et al. 2021

Solar RRL

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Inorganic metal halide perovskite solar cells have achieved incredible progress in recent years. However, the power conversion efficiency of the inorganic perovskite solar cells is still low compared with their hybrid counterparts due to the inescapable nonradiative losses from the charge recombination. Herein, a strategy is demonstrated to minimize the nonradiative recombination loss in CsPbI2Br solar cells by establishing a synergetic passivation from the mutual effect of alkali‐ and alkylammonium‐salt. Accordingly, a sequential passivation process employing KBr and phenethylammonium chloride overcomes their limited passivation effect in one single step. This dual passivation is beneficial to an improved CsPbI2Br film with reduced trap defects, enlarged grain size, as well as to form an ultrathin low‐dimensional perovskite surface layer. As a result, a very high power conversion efficiency of 16.9% is obtained for inorganic CsPbI2Br solar cells. The proposed dual passivation scheme provides a feasible route not only for the design of high‐efficiency perovskite solar cells but also for other perovskite‐related optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Dual Passivation Strategy for High Efficiency Inorganic CsPbI₂Br Solar Cells

Huang

Liu

et al. 2021

Solar RRL

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“…[ 38 ] Figure 5f shows the spectra of time‐resolved transient PL (TRPL) decay, the plot on semiology scale shows the third‐order exponential decay (Table S3, Supporting Information). [ 20,39 ] The fitted time profiles imply the P‐In 2 S 3 (s) has a longer decay time (681.1 ps) than In 2 S 3 (s) (665.9 ps), proving the impurity states are effective in prolonging the lifetime of photogenerated electrons hence facilitating the charge transport from the conduction band of P‐In 2 S 3 (s) to FTO substrate. These results reflect a decrease in radiative recombination under the help of In–P structure considering the fact that Auger recombination is negative.…”

Section: Resultsmentioning

confidence: 99%

Tuning Electronic Structure of 2D In₂S₃ via P Doping and Size Controlling Toward Efficient Photoelectrochemical Water Oxidation

et al. 2020

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sluggish four electrons transfer process. [4] Two-dimensional (2D) materials present the advantages of a short exciton diffusion distance and a thickness less than the width of the space charge region at solid/liquid interfaces, thus potentially serve as the excellent photoanodes. [5,6] Indium sulfide (In 2 S 3) is a broad-spectral 2D material with ordered vacancy spinel-like structure, the sulfide anions are closely packed in layers, with octahedral-coordinated In cations present within the layers, and tetrahedralcoordinated In cations between them. [7,8] 2D In 2 S 3 is an n-type semiconductor with small size effect, exhibiting large surface area when its size is of nanometers, exposing a high percentage of edges that could produce active surface toward catalytic reaction. The variation of size in nanometer scale could also tune the bandgap based on quantum size and surface effect. [9,10] The common approaches to the fabrication of 2D In 2 S 3 include chemical vapor deposition, hydrothermal, solvothermal, and solgel process, however, precise controlling the dimensions of this compound is still difficult and have not been reported. [11,12] Fortunately, in a solvothermal reaction, the size and shape of the products could be controlled by nucleation and subsequent growth. The homogeneous nucleation limits the formation of nucleation sites and quantity attributing to the diversity of surface energy and nucleation barrier. [13] In 2 S 3 was fabricated by the former researchers usually leads to the large multilayer flakes, [8,14] whereas a lower surface energy can make it easier to grow on seed sites. Therefore, seed-mediated growth has a good control of nucleation density, and thus attaining uniform structure with desired edges. Introduction of alien atoms to 2D material is an effective way for tuning electrical and optical properties of the host material via orbital hybridization. [15] The Fermi level E F of most n-type semiconductors can be tuned by introducing impurity doping which is capable of causing dramatic changes in their interlayer electrical structure. [16-18] Once the position of hybridized impurity level is near the E F or valence band, it becomes the electrons or holes trap center (e.g., P-CdS and Gd-BiVO 4) and then affects the charge separation. [19-21] The doping pattern of the impurity species in the host materials include interstitial and substitutional sites. If an impurity atom is located in the gap between atoms in the lattice, it often refers to an interstitial doping, whereas an impurity atom substitute at the position of metal or chalcogen

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“…[ 24–27 ] Among various strategies, additive engineering has been of specific interest and well developed for ease of operation. [ 19,28–33 ] Nevertheless, different perovskites clearly require different regulations. For instance, considering the very poor phase stability of CsPbI 3 , additive engineering usually aims to yield smaller grains with higher phase stability.…”

Section: Introductionmentioning

confidence: 99%

S₈ Additive Enables CsPbI₂Br Perovskite with Reduced Defects and Improved Hydrophobicity for Inverted Solar Cells

Yuan

Han

et al. 2021

Solar RRL

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Though prized for excellent thermal stability, inorganic perovskites are still behind organic/inorganic hybrid perovskites due to their high‐density defects and poor hydrophobicity. Herein, trace hydrophobic S8 is used as additive to optimize the solution‐processed CsPbI2Br perovskite film. A series of characterizations reveal that S8 additive not only leads to retarded crystallization of α‐CsPbI2Br perovskite at low temperature (<150 °C) via self‐formed Pb(S8)x2+ intermediate but also induces efficient grain‐boundary passivation via distinctive PbS coordination interaction and reduced wettability on perovskite surface, which all point to the formation of the perovskite film with reduced defects and improved hydrophobicity. As a result, the inverted perovskite solar cells (PSCs) based on the optimized all‐inorganic perovskite of CsPbI2Br:S8 deliver an increased power conversion efficiency (PCE) from 12.76% to 14.46% as well as remarkably enhanced device stability under thermal or ambient condition. This work thus provides a simple way as well as new insights for boosting the performance of solution‐processed all‐inorganic perovskite.

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A‐Site Rubidium Cation‐Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Exceeding 17% Efficiency

Cited by 116 publications

References 49 publications

Dual Passivation Strategy for High Efficiency Inorganic CsPbI₂Br Solar Cells

Dual Passivation Strategy for High Efficiency Inorganic CsPbI₂Br Solar Cells

Tuning Electronic Structure of 2D In₂S₃ via P Doping and Size Controlling Toward Efficient Photoelectrochemical Water Oxidation

S₈ Additive Enables CsPbI₂Br Perovskite with Reduced Defects and Improved Hydrophobicity for Inverted Solar Cells

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A‐Site Rubidium Cation‐Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Exceeding 17% Efficiency

Cited by 116 publications

References 49 publications

Dual Passivation Strategy for High Efficiency Inorganic CsPbI2Br Solar Cells

Dual Passivation Strategy for High Efficiency Inorganic CsPbI2Br Solar Cells

Tuning Electronic Structure of 2D In2S3 via P Doping and Size Controlling Toward Efficient Photoelectrochemical Water Oxidation

S8 Additive Enables CsPbI2Br Perovskite with Reduced Defects and Improved Hydrophobicity for Inverted Solar Cells

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Product

Resources

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A‐Site Rubidium Cation‐Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Exceeding 17% Efficiency

Dual Passivation Strategy for High Efficiency Inorganic CsPbI₂Br Solar Cells

Dual Passivation Strategy for High Efficiency Inorganic CsPbI₂Br Solar Cells

Tuning Electronic Structure of 2D In₂S₃ via P Doping and Size Controlling Toward Efficient Photoelectrochemical Water Oxidation

S₈ Additive Enables CsPbI₂Br Perovskite with Reduced Defects and Improved Hydrophobicity for Inverted Solar Cells