A single supply high performance PA MMIC for GSM handsets using quasi-enhancement mode PHEMT

Abey, W.; Moriuchi, T.; Hajji, R.; Nakamura, Tetsuo; Nonaka, Y.; Mitani, Eizo; Kennan, W.; Dang, Hongshe

doi:10.1109/mwsym.2001.967042

Cited by 17 publications

(1 citation statement)

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“…To achieve high efficiency and broad bandwidth, a two-stage fully integrated class-E PA with the reactance compensation technique is proposed using a monolithic microwave integrated circuit (MMIC) technology in this letter. The enhancement-mode pseudomorphic high electron mobility transistors (E-mode PHEMT) are suitable for the modern wireless mobile communications due to their single voltage supply and low knee voltage characteristics [5]. A few high efficiency PAs have been demonstrated using GaAs MESFET [6]- [8], and quasi E-mode [9], [10] technologies.…”

Section: Introductionmentioning

confidence: 99%

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Lin

Chang

2010

IEEE Microw. Wireless Compon. Lett.

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This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 m enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P 1 dB ) of higher than 27 dBm. Index Terms-Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT), high efficiency, power amplifier (PA), reactance compensation.

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