2016
DOI: 10.1039/c6tc03432b
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A simulation-assisted solution-processing method for a large-area, high-performance C10-DNTT organic semiconductor crystal

Abstract: A quasi-equilibrium low-speed solution shearing method to deposit C10-DNTT is developed.

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Cited by 54 publications
(62 citation statements)
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“…The surface morphology of films fabricated under a fast shearing speed (10 µm s −1 ) was compared in Figure S7b in the Supporting Information, the abundant large gaps are induced by the unbalanced diffusion rate between the evaporation of the solvent and the consumption of C 10 -DNTT molecules. [15,53,54] The detailed discussion about the correlation between the solvent evaporation and the shearing speed can be found in ref. [53].…”
Section: Doi: 101002/advs201900775mentioning
confidence: 99%
See 1 more Smart Citation
“…The surface morphology of films fabricated under a fast shearing speed (10 µm s −1 ) was compared in Figure S7b in the Supporting Information, the abundant large gaps are induced by the unbalanced diffusion rate between the evaporation of the solvent and the consumption of C 10 -DNTT molecules. [15,53,54] The detailed discussion about the correlation between the solvent evaporation and the shearing speed can be found in ref. [53].…”
Section: Doi: 101002/advs201900775mentioning
confidence: 99%
“…[15,53,54] The detailed discussion about the correlation between the solvent evaporation and the shearing speed can be found in ref. [53]. At high deposition temperature around 90 °C, the concentration of solution near the meniscus line drastically increased due to the rapid evaporation of the solvent.…”
Section: Doi: 101002/advs201900775mentioning
confidence: 99%
“…Static power consumption may be ignored for a simple circuit but increases rapidly with the level of integration. [66] Based on Equation (12), the key parameters to achieve low-power OFET include the reduction of V DD , since it has a quadratic effect on dynamic power dissipation (the most effective method is applying a high-k dielectric); steep subthreshold swing; and low dielectric leakage current (which both determine the static leakage current in the circuit). Other than this, device sizing and proper thermal design are also critical.…”
Section: Static Power Consumptionmentioning
confidence: 99%
“…[1][2][3][4][5] Recent advances in fabrication techniques and molecular designs have already lead to mobilities beyond 10 cm 2 (Vs) −1 . Among them, meniscus-guided solution-coating techniques such as dip coating, [14,15] zone casting, [16][17][18] solution shearing, [19][20][21] www.advmatinterfaces.de rules to guide experimentalists in choosing a proper solventsurface treatment combination. Among them, meniscus-guided solution-coating techniques such as dip coating, [14,15] zone casting, [16][17][18] solution shearing, [19][20][21] www.advmatinterfaces.de rules to guide experimentalists in choosing a proper solventsurface treatment combination.…”
Section: Introductionmentioning
confidence: 99%
“…[6][7][8][9][10] As grain boundaries can significantly reduce the performance of these films, [11][12][13] several techniques have been developed to fabricate highly crystalline thin films. Among them, meniscus-guided solution-coating techniques such as dip coating, [14,15] zone casting, [16][17][18] solution shearing, [19][20][21] rules to guide experimentalists in choosing a proper solventsurface treatment combination. This paper is organized as follows: First, the impact of surface treatment on the coating process and thin film morphology is discussed.…”
Section: Introductionmentioning
confidence: 99%