2018
DOI: 10.1088/1361-6560/aad7ee
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A simulation approach for determining the spectrum of DNA damage induced by protons

Abstract: To study the molecular damage induced in the form of single-strand and double-strand breaks by ionizing radiation at the DNA level, the Geant4-DNA Monte Carlo simulation code for complete transportation of primary protons and other secondary particles in liquid water has been employed in this work. To this aim, a B-DNA model and a thorough classification of the complexity of the DNA damage were used. Strand breaks were assumed to have primarily originated by direct physical interactions via energy depositions,… Show more

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Cited by 19 publications
(22 citation statements)
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“…Following previous studies (43,(52)(53)(54), the chemical stage lasted up to 1 ns to mimic scavenging properties within the cell. To model the indirect DNA damages, all radiolysis products were simulated; however, only interactions between hydroxyl radicals ( OH) and the DNA backbone were assumed to induce indirect strand breaks (SB indir ) with a reaction probability of 0.4 (42,47).…”
Section: Simulation Of Initial Dna Damagementioning
confidence: 99%
“…Following previous studies (43,(52)(53)(54), the chemical stage lasted up to 1 ns to mimic scavenging properties within the cell. To model the indirect DNA damages, all radiolysis products were simulated; however, only interactions between hydroxyl radicals ( OH) and the DNA backbone were assumed to induce indirect strand breaks (SB indir ) with a reaction probability of 0.4 (42,47).…”
Section: Simulation Of Initial Dna Damagementioning
confidence: 99%
“…Furthermore, different studies adopted different parameter values, which could also significantly alter simulation results. For instance, some studies (Mokari et al, 2018;Lampe et al, 2018b;Meylan et al, 2017;Nikjoo et al, 2001) assumed that a direct strand break (SB) is formed with a fixed threshold of 17.5 eV, i.e., a direct SB will be formed if the accumulated energy deposition within one sugar phosphate or hydration shell exceeds this threshold. In contrast, other studies (Friedland et al, 2017;Friedland et al, 2011;Friedland et al, 2003;Sakata et al, 2019) used a linear acceptance threshold ranging from 5 to 37.5 eV, i.e., the probability to form a direct SB linearly increases from 0 when less than 5 eV energy deposition was accumulated to 1 when more than 37.5 eV energy deposition was accumulated in the target DNA volume.…”
Section: Introductionmentioning
confidence: 99%
“…However, the uncertainties due to the chosen DNA geometry was not considered in this work. •OH damage probability (c) Direct damage threshold (Nikjoo et al, 2001) PITS --1 ns 0.13 (a) 17.5 eV (Friedland et al, 2017) PARTRAC --100 ns 0.65 (b) 5-37.5 eV (Friedland et al, 2011) PARTRAC --2.5 ns 0.65 (b) 5-37.5 eV (Friedland et al, 2003) PARTRAC --10 ns 0.13 (a) 5-37.5 eV (Sakata et al, 2019) Geant4-DNA option4 2.5 ns 0.4 (b) 5-37.5 eV (Mokari et al, 2018) Geant4-DNA default 1 ns 0.65 (b) 17.5 eV (Lampe et al, 2018a) Geant4-DNA option4 1 ns 0.4 (b) 17.5 eV (Meylan et al, 2017) Geant4-DNA default 2.5 ns 0.4 (b) 17.5 eV (a). Defined between •OH and whole DNA volume (b).…”
Section: Introductionmentioning
confidence: 99%
“…The bottom panel shows the ratio of our SSB and DSB yields, in comparison with PARTRAC and Geant4‐DNA proton results of Sakata et al 55 . as well as the results extracted from our previous studies for protons 16 and alpha particles 17 …”
Section: Resultsmentioning
confidence: 75%