A Simulation Approach for Depletion and Enhancement Mode in β-Ga<sub>2</sub>O<sub>3</sub> MOSFET

Kachhawa, Pharyanshu; Chaturvedi, Nidhi

doi:10.1080/02564602.2021.2004936

Cited by 6 publications

(3 citation statements)

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“…These techniques include contact area recess technique, reactive ion etching (RIE), annealing in Ar environment, epitaxial regrowth technique, and plasma bombardment prior to metallization and followed by thermal annealing. [ 26–33 ] Other researchers also observed Schottky contacts over samples that are not exposed to Ar. The process of Ar plasma bombardment, which is comparable to RIE treatment and results in oxygen vacancies and surface states, is responsible for the ohmic nature of contacts.…”

Section: Introductionmentioning

confidence: 97%

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

Kachhawa,

Jain,

Chaturvedi

2023

Physica Status Solidi (a)

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Herein, ultra‐wideband gap semiconductor β‐gallium oxide (β–Ga2O3) over sapphire ( orientation) is investigated for ohmic contact improvement with the help of argon (Ar)‐based reactive ion etching (RIE). Postannealing effects of these contacts over ( orientation) gallium oxide samples are also investigated. The surface defects and oxygen vacancies generated by Ar etching lead to the formation of as‐deposited ohmic contacts with the Ti/Au metal stack. A contact resistance of 10.52 Ω mm with a specific contact resistivity of 2.24 × 10−4 Ω cm2 is achieved with 10 min Ar RIE prior metallization. However, the contacts further degrade when samples are subjected to annealing. The electrical measurements and energy‐dispersive X‐ray spectroscopy elemental mappings at samples after annealing reveal that it is due to the formation of titanium oxide (TiOx) compound which acts as an insulator and concurrent with the out‐diffusion of Ga and in‐diffusion of gold. These results show the impact of anisotropy of gallium oxide over different annealing temperatures. These results and techniques may pave the way for better ohmic contacts for gallium oxide‐based high‐voltage and high‐power applications.

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Section: Introductionmentioning

confidence: 97%

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

Kachhawa,

Jain,

Chaturvedi

2023

Physica Status Solidi (a)

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“…It claims its advantages with its potential material properties like ultra‐wide band gap of 4.85 eV, high critical electrical field of 8 MV/cm, high Baliga and Johnson figure of merits compared to existing wide band‐gap semiconductors like GaN and SiC 9 . Gallium oxide‐based devices are being explored with a keen interest for various applications like high voltage‐high power applications and solar blind photodetectors with high efficiency and improved performance 10–12 . Gallium oxide‐based lateral and vertical FETs are being explored for its high voltage switching and RF power applications with betterment and futuristic development.…”

Section: Introductionmentioning

confidence: 99%

“…9 Gallium oxide-based devices are being explored with a keen interest for various applications like high voltage-high power applications and solar blind photodetectors with high efficiency and improved performance. [10][11][12] Gallium oxide-based lateral and vertical FETs are being explored for its high voltage switching and RF power applications with betterment and futuristic development. Many researchers have demonstrated breakthrough performance in terms of breakdown voltages 2 to 8.03 KV from a single gallium oxide device.…”

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Monte‐Carlo‐based simulation study of ion‐implantation in gallium oxide devices

Kachhawa

Chaturvedi

2022

Surface & Interface Analysis

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A computational study is done to carry out ion implantation for isolation in gallium oxide based devices using SRIM-2013 simulation tool. In this paper, deep acceptors for gallium oxide like Mg-and N-based implantation results and damage physics are discussed. Displacement per atoms (DPA)-based calculation is done to compare damage analysis for N and Mg ion implantation at 50 KeV beam energy. DPA calculations show that Mg generates more damages and vacancies to target gallium oxide with compared to N ion implantation. Furthermore, ion implantation doses are also calculated for isolation of 300 nm target depth of gallium oxide. Multiple energy ionimplantation for nitrogen (35/70/140 KeV) and for magnesium (50/100/165 KeV) in the gallium oxide target is simulated. Lighter ion nitrogen results into more ionization of gallium oxide compared to heavier magnesium ions for the same projected range.Simulation results show that a total energy of 142 KeV (57.96%) of nitrogen ion is lost during ionization process, whereas, for magnesium ion, the total energy loss is 89.49 KeV (28.41%) during ionization.

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