A simplified thermal model for calculating the maximum output power from a 1.3-μm buried heterostructure laser

Abstract

Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers Erratum: Highoutput power InGaAsP (λ = 1.3 μm) stripburied heterostructure lasers [Appl. Phys. Lett. 3 6, 358 (1980)] Appl. Phys. Lett. 40, 915 (1982); 10.1063/1.93287 Highoutput power InGaAsP (λ=1.3 μm) stripburied heterostructure lasers