A Simplified Current Oscillation Model in the SOGICON Device

A new model of current oscillation observed in the current saturation regime of the current-voltage characteristic in semiconductors with a dumbbell-shaped structure is proposed. As the electron and hole drift velocities deviate from Ohm's law, an electric double layer is formed on the anode side of the narrow region of a sample and a negative resistance region appears on the cathode side. These formations in the sample cause the current oscillation. Experimental measurements of the potential distributions in the sample are carried out for n-type germanium and it is shown that these results can be explained well by the proposed model.

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Current Oscillation in Semiconductors with a Dumbbell-Shaped Structure

Hirasawa¹,

Murayama

Oinuma

et al. 1985

Jpn. J. Appl. Phys.

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The necessary conditions for the occurrence of current oscillation, observed in the current-saturation regime regarding the current-voltage characteristics of semiconductors with a dumbbell-shaped structure, have been investigated by varying the carrier densities through illumination and heat. It is necessary to establish an oscillation of the space-charge layer in the wide region at the anode side at the devices. It is also necessary that the electric field at the boundary between the wide region on the anode side and the narrow region exceeds a critical value, above which the velocity of electrons or holes deviates from Ohm's law and becomes saturated.

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A Simplified Current Oscillation Model in the SOGICON Device

Cited by 5 publications

References 1 publication

A SOGICON type instability in silicon

A SOGICON type instability in silicon

Oscillation in Semiconductors with a Dumbbell-Shaped Structure

Current Oscillation in Semiconductors with a Dumbbell-Shaped Structure

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