1982
DOI: 10.1016/0022-3115(82)90277-x
|View full text |Cite
|
Sign up to set email alerts
|

A simple theory for maximum h inventory and release: A new transport parameter

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

3
47
0

Year Published

1986
1986
2016
2016

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 138 publications
(50 citation statements)
references
References 9 publications
3
47
0
Order By: Relevance
“…25 Analytical solutions to the hydrogen transport equation have been developed [395,396] for evaluating the hydrogen inventory, recycle and permeation rate and recycle time, under steady-state conditions where hydrogen is being implanted at flux Φ to a depth R p and release is controlled by diffusion and surface recombination. …”
mentioning
confidence: 99%
“…25 Analytical solutions to the hydrogen transport equation have been developed [395,396] for evaluating the hydrogen inventory, recycle and permeation rate and recycle time, under steady-state conditions where hydrogen is being implanted at flux Φ to a depth R p and release is controlled by diffusion and surface recombination. …”
mentioning
confidence: 99%
“…7,8) Under the irradiation of hydrogen ion with medium energy range (1-100 keV), the amount of produced defects is much larger than that of the implanted hydrogen atoms. Figure 1 shows the depth distribution of the displaced atoms per incident ion (dpa), for irradiations of 5, 7.5 and 10 keV H þ which were calculated by the TRIM92 code.…”
Section: Resultsmentioning
confidence: 99%
“…Since it is reported that some of hydrogen implanted in Si at room temperature can be desorbed thermally below 500 K without significant annealing effect on the defects in silicon, 7,10,11) we have made an additional experiment to see the change in the relative reflectance by hydrogen release as follows. After the H þ irradiation with the fluence of 1 Â 10 18 cm À2 , the irradiated silicon sample was gradually heated up to 423 K. After the temperature was reached at 423 K, the change of the relative reflectance was monitored at the fixed temperature at 423 K. Figure 4 shows the changes of the relative reflectance at 370, 500 and 700 nm with heating time.…”
Section: Changes In Optical Reflection Of Siliconmentioning
confidence: 99%
“…Using diffusivity values for deuterium in MANET (D) [16], the typical projected ranges PR for hundred-eVs deuterons (tenths A), the values for the reported impinging fluxes F in Section 4 and the obtained results for K 2 , the value of the transport parameter W [15]: W = (D/R) (FK 2 ) --1/2 % 10 --3 is derived. All the results obtained show a global coherence in this sense and evidence the pure surface limited release of the deuterium atoms implanted in MANET.…”
Section: Discussion and Concluding Remarksmentioning
confidence: 99%