2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits 2012
DOI: 10.1109/ipfa.2012.6306259
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A simple solution for low-driving-current output buffer failed at the low voltage ESD zapping event

Jian–Hsing Lee1,
J.R. Shih
2
,
Dedong Yang
3
et al.
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Cited by 3 publications
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References 15 publications
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Analyze the ESD Discrepancy between Grounded-Gate and Floating-Gate Power Transistors with Gate Electric Field and Magnetic Field Induced by ESD

Lee
1
,
Nidhi
2
,
Lin
3
et al. 2022
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
2
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0
0
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Analyze the ESD Discrepancy between Grounded-Gate and Floating-Gate Power Transistors with Gate Electric Field and Magnetic Field Induced by ESD

Lee
1
,
Nidhi
2
,
Lin
3
et al. 2022
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
2
0
0
0
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Abnormal I/O failure caused by the HBM induced MM-like ESD event

Lee
1
,
Iyer
2
2017
2017 IEEE International Reliability Physics Symposium (IRPS)
4
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0
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Schottky LDNMOS for HV ESD protection

Lee
1
,
Iyer
2
,
Jain
3
et al. 2017
2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)
5
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0
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