A simple set-up for in-situ observation of the critical dose of blistering during ion implantation in polymers

Shrinet, V.; Chaturvedi, U. K.; Agrawal, S.K.; Nigam, A.K.

doi:10.1016/0168-583x(84)90133-2

Cited by 6 publications

(1 citation statement)

References 5 publications

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“…For example, Shrinet et al [42] found that the critical dose for blistering in mylar and kapton is around 7 x 10 15 em -2 . For example, Shrinet et al [42] found that the critical dose for blistering in mylar and kapton is around 7 x 10 15 em -2 .…”

Section: Transport Processes Of High-fluence Implanted Ionsmentioning

confidence: 99%

Transport Processes in Low-Energy Ion-Irradiated Polymers

Fink¹,

Hnatowicz²

2004

Transport Processes in Ion-Irradiated Polymers

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In contrast to ion implantation into metals, semiconductors or ceramic materials, where the implanted ions distribute nicely according to the theoretically predicted ballistic distributions, for polymeric targets one has frequently observed strong deviations from the expected range profiles. It is accepted that these profiles result from the diffusional redistribution of the as-implanted particles, their mobility being influenced by the defects in the polymer that act as traps for the mobile species. In fact, not only the mobility of implanted ions, but also that of other penetrants (e.g., gases, liquids, etc.) is affected by these defects.Ion irradiation is known to destroy the polymers via mechanisms that are mediated by electronic and collisional ("nuclear") energy transfer (also called: "energy loss"). Collisional defects-i.e., production of knock-on atoms, voids and microcavities -preferentially show up as deep potential depressions with limited radius in the surrounding medium, whereas electronic defects primarily are excited atoms or ions (so-called radicals), usually with no extra free volume associated with them. The depth distributions of both these processes are usually strongly different from each other, so that they can be distinguished easily. It appears that electronic defects often have a limited lifetime due to recombination processes (i.e., short-range electronic and ionic transport processes), whereas collisional defects appear to exhibit long-term stability [1 J. As both these defects act as traps they can be probed via suitable tracer transport experiments. In pristine and in ion-irradiated polymers the transport of matter is nearly always a diffusive one, which is influenced by the above-mentioned traps.The question whether a penetrant in an ion-irradiated solid is predominantly captured by electronic or collisional ("nuclear") defects -i.e., radiation-induced free volume and/or radicals, respectively-apparently depends on both the type of the penetrant and the sample age, i.e., on the time in between the sample irradiation and the penetrant-uptake procedure. For example, noble gases were always found to be bound only to nuclear defects [2], whereas positrons were found to probe preferentially the electronic defects [3,4]. Whereas light reactive ions such as Li+ implanted into polymers D. Fink, Transport Processes in Ion-Irradiated Polymers

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Section: Transport Processes Of High-fluence Implanted Ionsmentioning

confidence: 99%