A simple model for studying the effects of activation treatment on the defects structure of cadmium telluride solar cells

Guillermo, H.; Rimmaudo, I.; Riech, I.; Abelenda, A.; López-Sánchez, A.

doi:10.1016/j.ijleo.2022.169296

Cited by 1 publication

(1 citation statement)

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“…Thin-film photovoltaic (TFPV) technologies have drawn huge research focus due to the benefits of lesser material consumption, greater power production, and scalable flexibility [2][3][4]. For the different types of thin-film solar cells, notable successes have been attained in the representative cadmium telluride (CdTe) [5], copper indium gallium selenide (CIGS) [6,7], and perovskites [8,9]. The paucity of indium (In) and toxicity of cadmium (Cd) restrict their long-term use.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of the Performance of Sb2Se3 Solar Cell via Optimizing the Optoelectronic Properties Based SCAPS-1D

et al. 2022

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Antimony trisulfide (Sb2Se3), a non-toxic and accessible substance, has possibilities as a material for use in solar cells. The current study numerically analyses Sb2Se3 solar cells through the program Solar Cell Capacitance Simulator (SCAPS). A detailed simulation and analysis of the influence of the Sb2Se3 layer’s thickness, defect density, band gap, energy level, and carrier concentration on the devices’ performance are carried out. The results indicate that a good device performance is guaranteed with the following values in the Sb2Se3 layer: an 800 optimal thickness for the Sb2Se3 absorber; less than 1015 cm−3 for the absorber defect density; a 1.2 eV optimum band gap; a 0.1 eV energy level (above the valence band); and a 1014 cm−3 carrier concentration. The highest efficiency of 30% can be attained following optimization of diverse parameters. The simulation outcomes offer beneficial insights and directions for designing and engineering Sb2Se3 solar cells.

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