A simple method to tune graphene growth between monolayer and bilayer

Xu, Xiaozhi; Lin, Chia‐Chi; Fu, Rui; Wang, Shuo; Pan, Rui; Chen, Guangshi; Shen, Qixin; Liu, Can; Guo, Xia; Wang, Yiquan; Zhao, Ruo; Liu, Kaihui; Luo, Zhengtang; Hu, Zonghai; Liu, Hongyun

doi:10.1063/1.4943040

Cited by 14 publications

(14 citation statements)

References 42 publications

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“…Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency . Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru), iridium (Ir), platinum (Pt), nickel (Ni) and copper (Cu) et al, and also can be directly grown on insulating substrates, such as SiC, SiO 2, sapphire, and h‐BN . Considering that direct graphene growth on desired insulating substrate without transfer process is promising for integration into silicon‐based technologies, it would be a favourable way for industrial application of graphene.…”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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“…The peak intensity ratio of ∼2 for 2D to G Raman mode peaks is indicative of the presence of monolayer graphene. 38 Also, the less than significant noise level intensity of D peak of disorder peak (D mode) at 1350 cm −1 reveals the superior quality of graphene with minimal number of any defects that could have been generated during the CVD or transfer process of graphene on SiO 2 /p-Si(111). Mild plasma treatment did not substantially alter the peak positions of Raman mode (2D, G, and D) on any of the samples, although the intensities of all Raman modes varied with a change in plasma power and duration.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

Nalamati

Devkota

et al. 2020

ACS Appl. Electron. Mater.

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We report the growth of vertical, high-quality GaAs0.9Sb0.1 nanowires (NWs) with improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si(111) by self-catalyzed molecular beam epitaxy. An O2 plasma treatment of the graphene under mild conditions enabled modification of the surface functionalization and improved reactivity of the graphene surface to semiconductor adatoms. The rise in the disorder peak of the Raman mode, decreased surface conductivity, and creation of additional O2 groups of plasma-treated graphene compared to that of pristine graphene confirmed functionalization of the graphene. To enhance the nucleation centers further for the vertical yield of NWs on the graphene surface, NWs were grown on a higher Sb composition GaAs0.6Sb0.4 stem for surface engineering the graphene surface via the surfactant effect of Sb and for better lattice matching. The NWs grown under optimal conditions exhibited a zinc blende crystal structure with no discernible structural defects. The NWs with a GaAs-passivated shell exhibited photoluminescence emission at 1.35 eV at 4 K and 1.28 eV at room temperature. The ensemble device fabricated with a top segment of GaAsSb NW-doped n-type using a GaTe captive source exhibited an optical responsivity of 110 A/W with a detectivity of 1.1 × 1014 Jones. These results of hybrid GaAsSb NW heterostructure/graphene devices show significant potential toward the fabrication of flexible near-infrared photodetector device applications. Further, the simple and efficient O2 plasma treatment approach for surface engineering of graphene in conjunction with a high Sb compositional stem has shown to be a promising route that can be broadly applicable for the growth of other III–V ternary material systems for improving the vertical yield of NWs.

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“…In order to realize the quality and the layer number of the camphor-based CVD graphene in this study, the Raman spectra are shown in Figure 3 b; the peak positions for the D band, G band, and 2D band in the graphene are 1350, 1600, and 2700 cm −1 , respectively [ 36 , 37 ]. The intensity ratio of the 2D and G peaks (i.e., I 2 D /I G ) and the full width at half maximum (FWHM) of the 2D peak can be used to further determine the graphene layer number (i.e., I 2 D /I G > 1.3 and FWHM < 30 cm −1 representing single-layer graphene and I 2 D /I G < 0.7 and FWHM > 70 cm −1 representing three or more layers of graphene) [ 36 , 37 , 38 , 39 , 40 ]. The calculated I 2 D /I G ratio value and FWHM of the 2D peak are ~1 and 45 cm –1 , respectively, corresponding to bilayer graphene.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection

et al. 2020

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This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (<Si bandgap (1.1 eV)) for long-wave near-infrared (LWNIR) absorption, respectively. According to the Raman spectra and large-area (16 × 16 μm2) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 103 cm2/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 × 1012 cmHz1/2/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future.

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A simple method to tune graphene growth between monolayer and bilayer

Cited by 14 publications

References 42 publications

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection

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