Abstract:In this paper we present a simple method for determining the linear thermal expansion coefficients (LTECs) of thin films using compact micromachined structures and common experimental apparatus. The structures can be fabricated by simple silicon-based micromachining techniques with one mask process and in situ along with active devices on the same chip for monitoring the LTECs of the thin film. An analytical expression is derived to relate the LTECs of thin films with the lateral displacements of microstructur… Show more
“…It has been reported that Fig. 4 Thermal expansion coefficient versus temperature (Pan 2002) this effect can generates a variation of analytical results about 10%.…”
Section: Discussionmentioning
confidence: 96%
“…Also, thermal expansion coefficient increase with temperature rise during micro actuator operation. The variation of thermal expansion coefficient for polysilicon is reported by Pan (2002). This report shows that polysilicon thermal expansion coefficient varies significantly over the temperature range of 450°C and higher.…”
Section: Introductionmentioning
confidence: 87%
“…The data related to the variation of Young's modulus and thermal expansion coefficient (TEC) reported in literature (Sharpe et al 2001;Pan 2002) is applied to the theoretical and numerical models (see Appendix).…”
The suspended electrothermal polysilicon micro beams generate displacements and forces by thermal buckling effects. In the previous electro-thermal and thermoelastic models of suspended polysilicon micro beams, the thermo-mechanical properties of polysilicon have been considered constant over a wide rang of temperature (20-900°C). In reality, the thermo-mechanical properties of polysilicon depend on temperature and change significantly at high temperatures. This paper describes the development and validation of theoretical and Finite element model (FEM) including the temperature dependencies of polysilicon properties such as thermal expansion coefficient and Young's modulus. In the theoretical models, two parts of elastic deflection model and thermal elastic model of micro beams buckling have been established and simulated. Also, temperature dependent buckling of polysilicon micro beam under high temperature has been modeled by Finite element analysis (FEA). Analytical results and numerical results using FEA are compared with experimental data available in literature. Their reasonable agreement validates analytical model and FEM. This validation indicates the importance of including temperature dependencies of polysilicon thermomechanical properties such as Coefficient of thermal expansion (CTE) in the previous models.
“…It has been reported that Fig. 4 Thermal expansion coefficient versus temperature (Pan 2002) this effect can generates a variation of analytical results about 10%.…”
Section: Discussionmentioning
confidence: 96%
“…Also, thermal expansion coefficient increase with temperature rise during micro actuator operation. The variation of thermal expansion coefficient for polysilicon is reported by Pan (2002). This report shows that polysilicon thermal expansion coefficient varies significantly over the temperature range of 450°C and higher.…”
Section: Introductionmentioning
confidence: 87%
“…The data related to the variation of Young's modulus and thermal expansion coefficient (TEC) reported in literature (Sharpe et al 2001;Pan 2002) is applied to the theoretical and numerical models (see Appendix).…”
The suspended electrothermal polysilicon micro beams generate displacements and forces by thermal buckling effects. In the previous electro-thermal and thermoelastic models of suspended polysilicon micro beams, the thermo-mechanical properties of polysilicon have been considered constant over a wide rang of temperature (20-900°C). In reality, the thermo-mechanical properties of polysilicon depend on temperature and change significantly at high temperatures. This paper describes the development and validation of theoretical and Finite element model (FEM) including the temperature dependencies of polysilicon properties such as thermal expansion coefficient and Young's modulus. In the theoretical models, two parts of elastic deflection model and thermal elastic model of micro beams buckling have been established and simulated. Also, temperature dependent buckling of polysilicon micro beam under high temperature has been modeled by Finite element analysis (FEA). Analytical results and numerical results using FEA are compared with experimental data available in literature. Their reasonable agreement validates analytical model and FEM. This validation indicates the importance of including temperature dependencies of polysilicon thermomechanical properties such as Coefficient of thermal expansion (CTE) in the previous models.
“…The deflection is measured by using the optical interferometric technique. Pan has reported a structure composed of a pair of cantilever beams with different lengths connected by a short tip beam to measure the CTE of the thin film [13]. When the temperature changes, a large displacement of the tip beam induced by different expansions or contractions between the two cantilever beams has been observed and measured with an optical microscope.…”
“…The structures comprise of a pair of strain gauges with known Young's modulus and a cantilever beam made of the measured film. The strain gauge is similar to author' s previous works [26,27]. The detailed performance of the strain gauge can be found in reference [26].…”
This work presents a novel method for in-situ determining Young's modulus of thin films at the wafer level by using a set of compact micromachined test structures and without any extra load applied to test such structures. The test structures comprise of a pair of microstrain gauges with known Young's modulus and a cantilever beam made of the measured film. The method utilizes inexpensive and available optical measuring equipment. An analytical model is derived to extract the Young's modulus of the measured film. A conventional surface-sacrificial layer micromachining technique is used to fabricate the structures. The micro strain gauges employed in the measurement are made of low-pressure chemical-vapor deposition (LPCVD) undoped polycrystalline silicon films produced by Semiconductor Research Center (SRC) and the measured film is made of PECVD silicon nitride for demonstration. The average value of the obtained Young's modulus of PECVD silicon nitride SiN x is 170 ± 3 GPa by using strain gauges with a residual stress of 211 ± 10 MPa.
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